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Sanyo Electric Components Datasheet

2SA1179N Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

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2SA1179N pdf
Ordering number : EN7198A
2SA1179N / 2SC2812N
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1179N / 2SC2812N Low-Frequency General-Purpose
Amp Applications
Features
Miniature package facilitates miniaturization in end products.
High breakdown voltage.
Specifications ( ) : 2SA1179N
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Marking : 2SA1179N : M / 2SC2812N : L
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=(--)35V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)6V, IC=(--)1mA
2SC2812N : VCE=6V, IC=1mA
2SA1179N : VCE=--6V, IC=--10mA
VCB=(--)6V, f=1MHz
IC=(--)50mA, IB=(--)5mA
IC=(--)50mA, IB=(--)5mA
IC=(--)10µA, IE=0A
IC=(--)1mA, RBE=
IE=(--)10µA, IC=0A
Ratings
(--)55
(--)50
(--)5
(--)150
(--)300
(--)30
200
150
--55 to +150
Unit
V
V
V
mA
mA
mA
mW
°C
°C
Ratings
min typ
200
100
(180)
(4.0)3.0
(--0.15)0.1
(--)55
(--)50
(--)5
max
(--)0.1
(--)0.1
400
(--)0.5
(--)1.0
Unit
µA
µA
MHz
MHz
pF
V
V
V
V
V
* : The 2SA1179N / 2SC2812N are classified by 1mA hFE as follws:
Rank
6
hFE 200 to 400
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92006 MS IM TC-00000143,00000144 / 72602 TS IM TA-2636, 2637 No.7198-1/4


Sanyo Electric Components Datasheet

2SA1179N Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

No Preview Available !

2SA1179N pdf
Package Dimensions
unit : mm (typ)
7053-001
0.45
3
1
0.95
1.9
2.93
2
2SA1179N / 2SC2812N
0.13
0 to 0.1
1.3 MAX
1 : Base
2 : Emitter
3 : Collector
SANYO : CPA
--16
--12
--8
--4
0
0
--240
--200
--160
--120
--80
--40
0
0
IC -- VCE
2SA1179N
--50-µ-4A5µA
--40µA
--35µA
--30µA
--25µA
--20µA
--15µA
--10µA
--5µA
IB=0µA
--10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE -- V IT04195
IC -- VBE
2SA1179N
VCE= --6V
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Base-to-Emitter Voltage, VBE -- V IT04197
IC -- VCE
20
50µA
45µA
16
40µA
35µA
12 30µA
25µA
8 20µA
2SC2812N
15µA
4 10µA
5µA IB=0µA
0
0 10 20 30 40 50
Collector-to-Emitter Voltage, VCE -- V IT04196
IC -- VBE
240
2SC2812N
VCE=6V
200
160
120
80
40
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V IT04198
No.7198-2/4


Part Number 2SA1179N
Description PNP / NPN Epitaxial Planar Silicon Transistors
Maker Sanyo Semicon Device
Total Page 4 Pages
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