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Sanyo Electric Components Datasheet

C4737 Datasheet

2SC4737

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C4737 pdf
Ordering number:ENN3880A
NPN Epitaxial Planar Silicon Transistor
2SC4737
50V/2A Driver Applications
Applications
· Suitable for use in switching of L load (motor
drivers, printer hammer drivers, relay drivers).
Features
· High DC current gain.
· Wide ASO.
· On-chip Zener diode of 60 ±10V between collector
and base.
· Uniformity in collector-to-base breakdown voltage.
· High inductive load handling capability.
Specifications
Package Dimensions
unit:mm
2084B
[2SC4737]
4.5
10.5
1.9
1.2
2.6
1.4
1.2
1.6
0.5
123
2.5 2.5
0.5
1 : Emitter
2 : Collector
3 : Base
SANYO : FLP
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
With a low-voltage diode (60±10V)
With a low-voltage diode (60±10V)
Ratings
50
50
6
2
4
1.5
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Inductive Load Handling Capability
Symbol
Conditions
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
Es/b
VCB=40V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1A
VCE=5V, IC=1A
IC=1A, IB=4mA
IC=1A, IB=4mA
L=100mH, RBE=100
Ratings
min typ
1000
4000
180
1.0
25
max
10
2
1.5
2.0
Unit
µA
mA
MHz
V
V
mJ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2000TS TA-2964/12099HA (KT)/D051MH, (KOTO) No.3880–1/4


Sanyo Electric Components Datasheet

C4737 Datasheet

2SC4737

No Preview Available !

C4737 pdf
Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Turn-on Time
Storage Time
Fall Time
2SC4737
Symbol
Conditions
V(BR)CBO
V(BR)CEO
ton
tstg
tf
IC=100µA, IE=0
IC=1mA, RBE=
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min typ
50 60
50 60
0.2
3.5
0.5
max
70
70
Unit
V
V
µs
µs
µs
Switching Time Test Circuit
OUTPUT
PW=50µs, D.C.1%
IB1= --IB2=4mA
INPUT
RB
50VR
+
100µF
VBB= --5V
IC=250 IB1= --250 IB2=1A
TUT
RL
20
+
470µF
VCC=20V
2.0 IC -- VCE
1500µA
1000µA
1.6 350µA
450µA 400µA
1.2 500µA
320500µµAA
0.8 200µA
150µA
0.4
0
0
3
2
10000
7
5
3
2
1000
7
5
3
2
100
7
53
IB=0
1234 5
Collector-to-Emitter Voltage, VCE – V ITR07514
hFE -- IC
VCE=5V
Ta=120°C
25°C
--40°C
5 7 0.1
23
5 7 1.0
Collector Current, IC – A
23 5
ITR07516
Es/b Test Circuit
VCC=20V, RBE=100
SW
L +VCC
TUT
IB
RBE
10k300
IC -- VBE
2.4
VCE=5V
2.0
1.6
1.2
0.8
0.4
0
0
1000
7
5
3
2
0.4 0.8
1.2 1.6 2.0
2.4 2.8
Base-to-Emitter Voltage, VBE – V ITR07515
Cob -- VCB
f=1MHz
100
7
5
3
2
10
0.1
2 3 5 7 1.0 2 3 5 7 10 2 3 5
Collector-to-Base Voltage, VCB -- V ITR07517
No.3880–2/4


Part Number C4737
Description 2SC4737
Maker Sanyo
Total Page 4 Pages
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