| Description | FOR 512K x 32Bit x 4 Bank DDR SGRAM The KM432D2131 is 67,108,864 bits of hyper synchronous data rate Dynamic GRAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 1.328GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequen... |
| Features |
• 3.3V ±5% power supply for device operation • 2.5V ±5% power supply for I/O interface • SSTL_2 compatible inputs/outputs • 4 banks operation • MRS cycle with address key programs -. Read latency 2, 3 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (sequential & interleave) • Full page burst length for sequential burst type only • Sta... |
| Datasheet |
 KM432D2131 Datasheet - 806.39KB |
