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SamHop
SamHop

SMD10L50SP Datasheet Preview

SMD10L50SP Datasheet

MOS Controlled Diode

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SMD10L50SP pdf
Sa mHop Microelectronics C orp.
MOS Controlled Diode
SMD10L50SPGreen
Product
Ver 1.0
PRODUCT SUMMARY
VRRM IO VF(MAX) @ 25°C IR(MAX) @ 25°C
50V 10A
0.47V
0.5mA
FEATURES
Low Profile Design for Smart Phone Charger
Ideal for SMT Mounting
Low forward voltage drop
High forward surge capability
Excellent High Temperature Stability
TO-277
Top View
Bottom View
ANODE PINS
BOTTOMSIDE
HEAT SINK
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VRRM
Peak Repetitive Reverse Voltage
VRWM
VRM
Working Peak Reverse Voltage
DC Blocking Voltage
VR(RMS)
RMS Reverse Voltage
IO Average Rectified Output Current
I FSM
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
EAS
Non-Repetitive Avalanche Energy
(TJ= 25°C,IAS = 10,L = 5mH)
PARM
Repetitive Peak Avalanche Energy
Value
50
50
50
35
10
120
180
24000
Unit
V
V
V
V
A
A
mJ
W
THERMAL CHARACTERISTICS
Symbol
R JA
TJ
T STG
Parameter
Thermal Resistance, Junction-to-Ambient
Operating Temperature Range
Storage Temperature Range
Value
70
-55 to 150
-55 to 175
Unit
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Symbol
VF
Parameter
Forward Voltage Drop
IR Leakage Current
Conditions
IF = 10A, TJ = 25°C
IF = 10A, TJ = 125°C
VR = 50V, TJ = 25°C
VR = 50V, TJ = 125°C
CT Total Capacitance
VR = 50V, f = 1MHz
Min
Details are subject to change without notice.
1
Typ Max Unit
0.42 0.47
V
0.39 0.46
V
120 500 uA
100 mA
200 pF
Aug,01,2014
www.samhop.com.tw



SamHop
SamHop

SMD10L50SP Datasheet Preview

SMD10L50SP Datasheet

MOS Controlled Diode

No Preview Available !

SMD10L50SP pdf
SMD10L50SP
Ver 1.0
100
10 TA=150 C
125 C
1
85 C
0.1
25 C
-55 C
0.01
0.001
0
0.1 0.2 0.3 0.4 0.5
VF, Instantaneous Forward Voltage (V)
Figure 1. Typical Forward Characteristics
1000000
100000
10000
1000
100
10
1
0.1
0.01
0
TA=150 C
125 C
85 C
25 C
-55 C
10 20 30 40 50
VR, Instantaneous Reverse Voltage (V)
Figure 2. Typical Reverse Characteristics
100000
10000
f = 1MHz
1000
100
0
10 20 30 40 50
VR, Instantaneous Reverse Voltage (V)
Figure 3. Total Capacitance vs. Reverse Voltage
8
7
6
5
4
3
2
1
0
0 5 10 15
IF(AV) Average Forward Current (A)
Figure 4. Forward Power Dissipation
12
Based on Lead Temp (°C)
10
8
Note 1
6
4
2
0
0 25 50 75 100 125 150
TC, Case Temp (°C)
Figure 4. Forward Power Dissipation
100000
10000
1000
100
0 0.1 1 10 100 1000 10000
TP, Pulse Duration (uS)
Figure 6. Maximum Avalanche Power Curve
Note : 1.Device mounted on FR-4 substrate, 2oz copper.
2
Aug,01,2014
www.samhop.com.tw


Part Number SMD10L50SP
Description MOS Controlled Diode
Maker SamHop
Total Page 4 Pages
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