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STMicroelectronics Electronic Components Datasheet

X00619 Datasheet

0.8 A sensitive gate SCR

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X00619
0.8 A sensitive gate SCR
Features
IT(RMS) = 0.8 A
VDRM / VRRM = 600 V
IGT = 30 to 200 µA
Applications
Limited gate current topologies
Ground fault circuit interrupters
Overvoltage crowbar protection in power
supplies
Protection in electronic ballasts
Capacitive discharge ignitions
Ignitors (lighting, oven...)
Description
The X006 SCR can be used as on/off function in
applications where topology does not offer high
current for gate triggering.
This device is optimized in forward voltage drop
and inrush current capabilities for reduced power
losses and high reliability in harsh environments.
A
G
K
KGA
TO-92
(X00619-MA)
Table 1. Device summary
IT(RMS)
0.8 A
VDRM / VRRM
600 V
IGT 30 to 200 µA
May 2009
Doc ID 15755 Rev 1
1/7
www.st.com
7



STMicroelectronics Electronic Components Datasheet

X00619 Datasheet

0.8 A sensitive gate SCR

No Preview Available !

X00619 pdf
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1 Characteristics
X00619
Table 2.
Symbol
Absolute ratings (limiting values, TJ = 25 °C unless otherwise specified)
Parameter
Value
Unit
IT(RMS) On-state rms current (180 °Conduction angle)
IT(AV) Average on-state current (180 °Conduction angle)
ITSM Non repetitive surge peak on-state current
I²t I²t Value for fusing
di/dt
IGM
PG(AV)
Tstg
Tj
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
TL = 85 °C
TL = 85 °C
tp = 8.3 ms
Tj = 25 °C
tp = 10 ms
tp = 10 ms Tj = 25 °C
F = 60 Hz Tj = 125 °C
tp = 20 µs
Tj = 125 °C
Tj = 125 °C
0.8 A
0.5 A
10
A
9
0.4 A2s
50 A/µs
1
0.1
- 40 to + 150
- 40 to + 125
A
W
°C
Table 3.
Symbol
Electrical characteristics (TJ = 25 °C unless otherwise specified)
Test conditions
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VD = 12 V, RL = 140 Ω
VD = VDRM, RL = 3.3 kΩ , RGK = 1 kΩ
IRG = 10 µA
IT = 50 mA, RGK = 1 kΩ
IG = 1 mA, RGK = 1 kΩ
VD = 67% VDRM, RGK = 1 kΩ
Tj = 125 °C
Tj = 125 °C
MIN.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
Value
30
200
0.8
0.2
5
5
6
40
Unit
µA
V
V
V
mA
mA
V/µs
Table 4. Static electrical characteristics (per diode)
Symbol
Test conditions
VTM ITM = 1 A, tp = 380 µs
VTO Threshold voltage
Rd Dynamic resistance
IDRM IRRM VDRM = VRRM, RGK = 1 kΩ
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
MAX
Value
1.35
0.85
245
1
100
Unit
V
V
mΩ
µA
µA
2/7 Doc ID 15755 Rev 1



STMicroelectronics Electronic Components Datasheet

X00619 Datasheet

0.8 A sensitive gate SCR

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X00619 pdf
www.DatXa0S0h6e1e9t4U.com
Characteristics
Table 5. Thermal resistances
Symbol
Rth(j-a)
Rth(j-l)
Junction to ambient (DC)
Junction to lead (DC)
Parameter
Value
150
70
Unit
°C/W
Figure 1.
Maximum average power
dissipation vs. average
on-state current
Figure 2. Average and DC on-state current
vs. case temperature
P(W)
0.6
α = 180°
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.1
IT(AV)(A)
0.2 0.3
0.4
360°
α
0.5 0.6
IT(AV)(A)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
D.C.
α = 180°
Tl(°C)
50 75
100 125
Figure 3. Average and DC on-state current
vs. case temperature
IT(AV)(A)
1.0
0.9
D.C.
0.8
0.7
0.6
α = 180°
0.5
0.4
0.3
0.2
0.1
0.0
0
25
SCU = 0.5 cm2
Tamb(°C)
50 75
100 125
Figure 4.
Relative variation of thermal
impedance junction to ambient vs.
pulse duration
Zth(j-a)/Rth(j-a)
1.00
SCU = 0.5 cm2
0.10
0.01
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00
1.E+01
1.E+02
1.E+03
Doc ID 15755 Rev 1
3/7




Part Number X00619
Description 0.8 A sensitive gate SCR
Maker ST Microelectronics
Total Page 7 Pages
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