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STMicroelectronics Electronic Components Datasheet

W8NC90Z Datasheet

STW8NC90Z

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W8NC90Z pdf
STW8NC90Z
N-CHANNEL 900V - 1.1 - 7.6A TO-247
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STW8NC90Z
900 V < 1.38 7.6 A
s TYPICAL RDS(on) = 1.1
s EXTREMELY HIGH dv/dt CAPABILITY GATE-
TO-SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
TO-247
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current (*)
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)ISD 7.6A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
(*)Limited only by maximum temperature allowed
July 2000
Value
900
900
±25
7.6
4.8
30
190
1.51
±50
4
3
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
mA
KV
V/ns
°C
°C
1/8


STMicroelectronics Electronic Components Datasheet

W8NC90Z Datasheet

STW8NC90Z

No Preview Available !

W8NC90Z pdf
STW8NC90Z
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Rthc-sink Thermal Resistance Case-sink Typ
Tl Maximum Lead Temperature For Soldering Purpose
0.66
30
0.1
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
7.6
430
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
900
BVDSS/TJ
Breakdown Voltage Temp.
Coefficient
ID = 1 mA, VGS = 0
1
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±20V
±10
°C/W
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
V/°C
µA
µA
µA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
ID(on)
On State Drain Current
Test Conditions
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.8 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
3
Typ.
4
1.1
Max.
5
1.38
Unit
V
7.6 A
DYNAMIC
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID =3.8A
Min.
VDS = 25V, f = 1 MHz, VGS = 0
Typ.
9
3550
205
25
Max.
Unit
S
pF
pF
pF
2/8


Part Number W8NC90Z
Description STW8NC90Z
Maker STMicroelectronics
Total Page 8 Pages
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