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STMicroelectronics Electronic Components Datasheet

W20NM60FD Datasheet

STW20NM60FD

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W20NM60FD pdf
STP20NM60FD - STF20NM60D
STW20NM60FD
N-CHANNEL 600V - 0.26- 20A TO-220/TO-220FP/TO-247
FDmesh™ POWER MOSFET (with FAST DIODE)
TYPE
VDSS RDS(on)
ID
Pw
STP20NM60FD
STF20NM60D
STW20NM60FD
600 V < 0.29
600 V < 0.29
600 V < 0.29
20 A
20 A
20 A
192 W
45 W
214 W
n TYPICAL RDS(on) = 0.26
n HIGH dv/dt AND AVALANCHE CAPABILITIES
n 100% AVALANCHE TESTED
n LOW INPUT CAPACITANCE AND GATE
CHARGE
n LOW GATE INPUT RESISTANCE
n TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
TO-220
3
2
1
TO-220FP
3
2
1
TO-247
DESCRIPTION
The FDmesh™ associates all advantages of re-
duced on-resistance and fast switching with an in-
trinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in par-
ticular ZVS phase-shift converters.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
n ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT
ORDERING INFORMATION
SALES TYPE
MARKING
STP20NM60FD
P20NM60FD
STF20NM60D
F20NM60D
STW20NM60FD
W20NM60FD
PACKAGE
TO-220
TO-220FP
TO-247
June 2003
PACKAGING
TUBE
TUBE
TUBE
1/11
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STMicroelectronics Electronic Components Datasheet

W20NM60FD Datasheet

STW20NM60FD

No Preview Available !

W20NM60FD pdf
STP20NM60FD - STF20NM60D - STW20NM60FD
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS =0 )
VDGR Drain-gate Voltage (RGS =2 0 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO Insulation Withstand Voltage (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 20 A, di/dt 400 A/µs, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed
Value
Unit
STP20NM60FD STF20NM60D STW20NM60FD
600 V
600 V
± 30 V
20 20 (*) 20 A
12.6
12.6 (*)
12.6 A
80 80 (*) 80 A
192 45 214 W
1.20
0.36
1.42
W/°C
20 V/ns
- 2500 - V
–6 5t o1 50
°C
°C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
TO-220 TO-220FP
0.65
2.8
62.5
300
TO-247
0.585
30
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj =2 5° C, ID =I AR,V DD =3 5V )
Max Value
10
700
Unit
A
mJ
2/11


Part Number W20NM60FD
Description STW20NM60FD
Maker ST Microelectronics
Total Page 11 Pages
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