http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




STMicroelectronics Electronic Components Datasheet

W20NM50FD Datasheet

STW20NM50FD

No Preview Available !

W20NM50FD pdf
STW20NM50FD
N-CHANNEL 500V - 0.22- 20A TO-247
FDmesh™ Power MOSFET (with FAST DIODE)
TYPE
VDSS
RDS(on)
ID
STW20NM50FD
500V
<0.25
20 A
www.DataSheet4Us.coTmYPICAL RDS(on) = 0.22
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE TESTED
s LOW INPUT CAPACITANCE AND GATE CHARGE
s LOW GATE INPUT RESISTANCE
s TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The FDmesh™ associates all advantages of reduced
on-resistance and fast switching with an intrinsic fast-
recovery body diode. It is therefore strongly recom-
mended for bridge topologies, in particular ZVS phase-
shift converters.
APPLICATIONS
s ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS
FOR SMPS AND WELDING EQUIPMENT
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
June 2002
Value
500
500
±30
20
14
80
214
1.42
20
–65 to 150
150
(1)ISD 20A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX.
(*)Limited only by maximum temperature allowed
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
1/8


STMicroelectronics Electronic Components Datasheet

W20NM50FD Datasheet

STW20NM50FD

No Preview Available !

W20NM50FD pdf
STW20NM50FD
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Rthj-amb Thermal Resistance Junction-ambient
Max
Tl Maximum Lead Temperature For Soldering Purpose
0.585
30
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
www.DataSheet4U.com
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 35 V)
Max Value
10
700
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
500
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 10A
Min.
3
Typ.
4
0.22
Max.
5
0.25
Unit
V
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID = 10A
9S
Ciss Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
1380
pF
Coss
Output Capacitance
290 pF
Crss Reverse Transfer
Capacitance
40 pF
Coss eq. (2) Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 400V
130 pF
Rg Gate Input Resistance
f=1 MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
2.8
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
2/8


Part Number W20NM50FD
Description STW20NM50FD
Maker STMicroelectronics
Total Page 8 Pages
PDF Download
W20NM50FD pdf
Download PDF File
W20NM50FD pdf
View for Mobile






Related Datasheet

1 W20NM50FD STW20NM50FD STMicroelectronics
STMicroelectronics
W20NM50FD pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components