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STMicroelectronics Electronic Components Datasheet

W16NA40 Datasheet

STW16NA40

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W16NA40 pdf
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STW16NA40
STH16NA40FI
N - CHANNEL 400V - 0.21- 16A - TO-247/ISOWATT218
POWER MOS TRANSISTORS
TYPE
STW16NA40
STH16NA40FI
VDSS
400 V
400V
RDS(on)
< 0.3
< 0.3
ID
16 A
10 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.21
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
3
2
1
3
2
1
TO-247
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
October 1998
Value
STW16NA40 STH16NA40FI
400
400
± 30
16 10
10 7
64 64
180 70
1.44
0.56
4000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/6


STMicroelectronics Electronic Components Datasheet

W16NA40 Datasheet

STW16NA40

No Preview Available !

W16NA40 pdf
STW16NA40-STH16NA40FI
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THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-247
0.69
ISOWATT218
1.78
30
0.1
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
EAR
IAR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
16
435
23
10
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
IDSS
IGSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Tc = 100 oC
Min.
400
Typ.
Max.
25
250
±100
Unit
V
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On
Resistance
On State Drain Current
VGS = 10V ID = 8 A
VGS = 10V ID = 8 A
VDS > ID(on) x RDS(on)max
VGS = 10 V
Tc = 100oC
Min.
2.25
16
Typ.
3
0.21
Max.
3.75
0.3
0.6
Unit
V
A
DYNAMIC
Symbol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max
ID = 8 A
Min.
9
VDS = 25 V f = 1 MHz VGS = 0
Typ.
12
2600
390
120
Max.
3500
540
160
Unit
S
pF
pF
pF
2/6
®


Part Number W16NA40
Description STW16NA40
Maker ST Microelectronics
Total Page 6 Pages
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