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STMicroelectronics Electronic Components Datasheet

W15NK90Z Datasheet

STW15NK90Z

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W15NK90Z pdf
eet4U.com STW15NK90Z
Sh N-CHANNEL 900V - 0.40- 15A TO-247
ta Zener-Protected SuperMESH™ MOSFET
w.DaTYPE
ww STW15NK90Z
VDSS RDS(on)
900 V < 0.55
ID
15 A
Pw
350 W
s TYPICAL RDS(on) = 0.40
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
ms GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
os VERY GOOD MANUFACTURING
.cREPEATIBILITY
3
2
1
TO-247
UDESCRIPTION
t4The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
eon-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
emost demanding applications. Such series comple-
hments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
taSAPPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
www.Das IDEAL FOR OFF-LINE POWER SUPPLIES
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE
STW15NK90Z
MARKING
W15NK90Z
April 2004
.comPACKAGE
UTO-247
PACKAGING
TUBE
www.DataSheet4 1/9


STMicroelectronics Electronic Components Datasheet

W15NK90Z Datasheet

STW15NK90Z

No Preview Available !

W15NK90Z pdf
STW15NK90Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 15A, di/dt 200 A/µs, VDD 900V , Tj TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Value
900
900
± 30
15
9.5
60
350
2.77
6000
4.5
-55 to 150
0.36
50
300
Max Value
15
360
Min.
30
Typ.
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
°C/W
°C/W
°C
Unit
A
mJ
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/9


Part Number W15NK90Z
Description STW15NK90Z
Maker ST Microelectronics
Total Page 9 Pages
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