http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




STMicroelectronics Electronic Components Datasheet

W15NB50 Datasheet

STW15NB50

No Preview Available !

W15NB50 pdf
t4U.com STW15NB50
ee® STH15NB50FI
Sh N-CHANNEL 500V - 0.33- 14.6A -
ata T0-247/ISOWATT218 PowerMESHMOSFET
w.DTYPE
w STW15NB50
wwww.DataSheet4U.ScoTmH15 N B5 0 F I
VDSS
500 V
500 V
RDS(on)
< 0.36
< 0.36
ID
14.6 A
10.5 A
s TYPICAL RDS(on) = 0.33
s EXTREMELY HIGH dv/dt CAPABILITY
ms ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
os VERY LOW INTRINSIC CAPACITANCES
.cs GATE CHARGE MINIMIZED
DESCRIPTION
UUsing the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
t4advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
eproprietary edge termination structure, gives the
elowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
hand switching characteristics.
SAPPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
tas SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
aEQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
.DABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
wwVDS
VDGR
wVGS
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
3
2
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
Value
STW15NB50 STH15NB50FI
500
500
± 30
Uni t
V
V
V
ID
ID
IDM ( )
Ptot
dv/dt(1)
VISO
Tstg
Tj
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
June 1998
14.6
10.5
m9.2 6.6
.co58.4
58.4
190 80
t4U0.64
1.52
e4
e4000
h-65 to 150
www.DataS150
A
A
A
W
W/oC
V/ ns
V
oC
oC
1/9


STMicroelectronics Electronic Components Datasheet

W15NB50 Datasheet

STW15NB50

No Preview Available !

W15NB50 pdf
STW15NB50 - STH15NB50FI
THERMAL DATA
Rt hj-ca se
Rt hj- amb
Rthc- si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
T O-2 47
0.66
IS OW ATT 218
1.56
30
0.1
300
oC/ W
oC/ W
oC/ W
oC
AVALANCHE CHARACTERISTICS
www.DataSheet4U.coSmymb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR , VDD = 50 V)
Max Valu e
14.6
850
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
IDSS
IGSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
oC
Tc = 125
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
500
Typ .
Max.
Unit
V
1 µA
50 µA
± 100 nA
ON ()
S ymb ol
V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 7.5 A
Resistance
On St ate Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
3
Typ .
4
Max.
5
Unit
V
0.33 0.36
14.6
A
DYNAMIC
S ymb ol
gfs ()
Ciss
Coss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 7.5 A
Min.
8
Typ .
12
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
2600
330
40
3400
430
55
pF
pF
pF
2/9


Part Number W15NB50
Description STW15NB50
Maker ST Microelectronics
Total Page 9 Pages
PDF Download
W15NB50 pdf
Download PDF File
W15NB50 pdf
View for Mobile






Related Datasheet

1 W15NB50 STW15NB50 ST Microelectronics
ST Microelectronics
W15NB50 pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components