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STMicroelectronics Electronic Components Datasheet

W14NK50Z Datasheet

STW14NK50Z

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W14NK50Z pdf
STP14NK50Z, STP14NK50ZFP
STB14NK50Z, STB14NK50Z-1, STW14NK50Z
N-CHANNEL500V-0.34-14ATO-220/FP/D2PAK/I2PAK/TO-247
Zener-Protected SuperMESH™Power MOSFET
TYPE
VDSS RDS(on)
ID
Pw
STP14NK50Z
STP14NK50ZFP
STB14NK50Z
STB14NK50Z-1
STW14NK50Z
500 V
500 V
500 V
500 V
500 V
< 0.38
< 0.38
< 0.38
< 0.38
< 0.38
14 A
14 A
14 A
14 A
14 A
150 W
35 W
150 W
150 W
150 W
s TYPICAL RDS(on) = 0.34
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
TO-220
123
I2PAK
3
2
1
TO-247
3
2
1
TO-220FP
3
1
D2PAK
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
s LIGHTING
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE
MARKING
STP14NK50Z
P14NK50Z
STP14NK50ZFP
P14NK50ZFP
STB14NK50ZT4
B14NK50Z
STB14NK50Z-1
B14NK50Z
STW14NK50Z
W14NK50Z
March 2003
PACKAGE
TO-220
TO-220FP
D2PAK
I2PAK
TO-247
PACKAGING
TUBE
TUBE
TAPE & REEL
TUBE
TUBE
1/14
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STMicroelectronics Electronic Components Datasheet

W14NK50Z Datasheet

STW14NK50Z

No Preview Available !

W14NK50Z pdf
STP14NK50Z, STP14NK50ZFP, STB14NK50Z, STB14NK50Z-1, STW14NK50Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 14A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed
Value
STP14NK50Z
STB14NK50Z/-1
STP14NK50ZFP
STW14NK50Z
500
500
± 30
14
14 (*)
14
7.6
7.6 (*)
7.6
48
48 (*)
48
150 35 150
1.20 0.28 1.20
4000
4.5
-
2500
-
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
THERMAL DATA
TO-220
I2PAK
D2PAK
TO-220FP
TO-247
Rthj-case Thermal Resistance Junction-case Max
0.83 3.6 0.83 °C/W
Rthj-pcb Thermal Resistance Junction-pcb Max (#)
60
°C/W
Rthj-amb Thermal Resistance Junction-ambient Max
62.5 50 °C/W
Tl Maximum Lead Temperature For Soldering Purpose
300
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
12
400
Unit
A
mJ
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
(#) When mounted on minimum Footprint
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the 30V Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
2/14
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Part Number W14NK50Z
Description STW14NK50Z
Maker STMicroelectronics
Total Page 14 Pages
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