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STMicroelectronics Electronic Components Datasheet

T1635-600G Datasheet

HIGH PERFORMANCE TRIAC

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T1635-600G pdf
T1635-600G
® T1650-600G
HIGH PERFORMANCE TRIAC
FEATURES
HIGH COMMUTATION PERFORMANCES
SNUBBERLESSTM TECHNOLOGY
HIGH NOISE IMMUNITY (dV/dt)
HIGH ITSM
DESCRIPTION
The T1635-600G and T1650-600G triacs are
using high performance SNUBBERLESS
technology.
They are intended for AC control applications
using surface mount technology.
These devices are perfectly suited where high
commutation and surge performances are
required.
A2
A2 G
A1
D2PAK
ABSOLUTE RATINGS (limiting values)
Symbol
VDRM
VRRM
IT(RMS)
ITSM
I2t
dI/dt
Tstg
Tj
T
Parameter
Repetitive peak off-state voltage
Tj = 125°C
RMS on-state current
(360° conduction angle)
Tc= 105°C
Non repetitive surge peak on-state current
(Tj initial = 25°C)
I2t Value for fusing
tp = 8.3ms
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
IG = 500 mA dIG /dt = 1 A/µs.
Repetitive
F = 50 Hz
Non Repetitive
Storage temperature range
Operating junction temperature range
Maximum temperature for soldering during 10s
Value
600
Unit
V
16 A
170 A
160
128 A2s
20 A/µs
100
- 40, + 150
- 40, + 125
260
°C
°C
May 1998 - Ed: 2A
1/5



STMicroelectronics Electronic Components Datasheet

T1635-600G Datasheet

HIGH PERFORMANCE TRIAC

No Preview Available !

T1635-600G pdf
T1635-600G / T1650-600G
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-c)
Rth(j-c)
Parameter
Junction to ambient (S=1cm2)
Junction to case for DC
Junction to case for AC 360° conduction angle (F=50Hz)
GATE CHARACTERISTICS (maximum values)
PG (AV)= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs)
Value
45
1.6
1.2
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
T1635 T1650 Unit
IGT VD=12V (DC) RL=33
Tj= 25°C I-II-III MIN 2 mA
MAX 35 50
VGT VD=12V (DC) RL=33
Tj= 25°C I-II-III MAX
1.3
V
VGD VD=VDRM RL=3.3k
Tj= 125°C I-II-III MIN
0.2
V
IH * IT= 100mA Gate open
Tj= 25°C
MAX 35 50 mA
IL IG = 1.2 IGT
Tj = 25°C I-III MAX 50 60 mA
II MAX 80 120
VTM * ITM= 22.5A tp= 380µs
Tj= 25°C
MAX
1.5
V
IDRM
VD = VDRM
Tj= 25°C
MAX
5
µA
IRRM
VR = VRRM
Tj= 125°C
MAX
2
mA
dV/dt * Linear slope up to VD=67%VDRM Tj= 125°C
Gate open
MIN 500 1000 V/µs
(dI/dt)c * Without snubber
Tj= 125°C
MIN 8.5 14 A/ms
* For either polarity of electrode A2 voltage with reference to electrode A1.
ORDERING INFORMATION Add "-TR" suffix for Tape & Reel shipment
T 16 35 - 600
TRIAC
CURRENT
SENSITIVITY
G
PACKAGE :
G = D2PAK
VOLTAGE
2/5



STMicroelectronics Electronic Components Datasheet

T1635-600G Datasheet

HIGH PERFORMANCE TRIAC

No Preview Available !

T1635-600G pdf
Fig 1: Maximum power dissipation versus RMS
on-state current.
P(W)
20
15
10
5
α=30°
0
02
α=60°
α=180°
α=120°
α=90°
IT(RMS)(A)
4 6 8 10 12 14 16
Fig. 3: RMS on-state current versus case tem-
perature.
T1635-600G / T1650-600G
Fig. 2: Correlation between maximum power dissi-
pation and maximum allowable temperatures
(Tamb and Tcase) for different thermal resistances
heatsink+contact.
P(W) Tcase (°C)
20 Rth=4°C/W
Rth=2°C/W Rth=1°C/W Rth=0°C/W
105
15
110
10
115
5
α=180°
Tamb(°C)
120
0 125
0 20 40 60 80 100 120 140
Fig. 4: Relative variation of thermal impedance
versus pulse duration.
IT(RMS)(A)
18
16
14
12
10
8
6
4
2
0
0
25
α=180°
Tcase(°C)
50 75
100 125
Fig. 5: Relative variation of gate trigger current and
holding current versus junction temperature (typi-
cal values).
IGT,IH[Tj]/IGT,IH[Tj=25°C]
2.5
2.0 IGT
1.5
1.0 IH
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120 140
K=[Zth/Rth]
1.00
Zth(j-c)
0.10
Zth(j-a)
tp(s)
0.01
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Fig. 6: Non repetitive surge peak on-state current
versus number of cycles.
ITSM(A)
160
140
120
100
80
60
40
20
0
1
Tj initial=25°C
F=50Hz
Number of cycles
10 100
1000
3/5




Part Number T1635-600G
Description HIGH PERFORMANCE TRIAC
Maker ST Microelectronics
Total Page 5 Pages
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