http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



STMicroelectronics Electronic Components Datasheet

T1630-600W Datasheet

(T1620-600W/700W / T1630-600W) Snubberless Triac

No Preview Available !

T1630-600W pdf
wwsFwEITA.RDTMUSaR=tE1aS®6SA heet4U.com
T1620-600W / 700W
T1630-600W
SNUBBERLESS TRIAC
A2 A1
s VDRM = VRRM = 600V to 700V
s EXCELLENT SWITCHING PERFORMANCES
ms INSULATING VOLTAGE = 1500V(RMS)
s U.L. RECOGNIZED : E81734
G
.coDESCRIPTION
The T1620-600W/700W and 1630-600W triacs
use high performance glass passivated chip tech-
Unology, housed in a fully molded plastic
ISOWATT220AB package.
t4The SNUBBERLESSTM concept offers suppres-
sion of R-C network, and is suitable for applica-
tions such as phase control and static switch on
einductive and resistive loads.
G
A2
A1
ISOWATT220AB
(Plastic)
eABSOLUTE RATINGS (limiting values)
hSymbol
Parameter
Value
SIT(RMS)
RMS on-state current
(360° conduction angle)
Tc= 75°C
16
taITSM Non repetitive surge peak on-state current
(Tj initial = 25°C )
tp = 16.7 ms
(1 cycle, 60 Hz)
165
.DaI2t I2t Value (half-cycle, 50 Hz)
tp = 10 ms
(1/2 cycle, 50 Hz)
tp = 10 ms
195
190
wdI/dt Critical rate of rise of on-state current
Repetitive
Gate supply : IG = 500 mA dIG /dt = 1 A/µs.
F = 50 Hz
20
w Non Repetitive
100
wTstg Storage temperature range
- 40 to + 150
Unit
A
A
A2s
A/µs
°C
Tj Operating junction temperature range
- 40 to + 125
mTl Maximum lead temperature for soldering during 10s at 4.5 mm
ofrom case
260 °C
et4U.cSymbol
Parameter
SheVDRM
taVRRM
Repetitive peak off-state voltage
Tj = 125°C
www.DaSeptember 2001 - Ed: 1A
Value
600 700
600 700
Unit
V
1/5



STMicroelectronics Electronic Components Datasheet

T1630-600W Datasheet

(T1620-600W/700W / T1630-600W) Snubberless Triac

No Preview Available !

T1630-600W pdf
T1620-600W / 1620-700W and T1630-600W
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-c)
Parameter
Junction to ambient
Junction to case for A.C (360° conduction angle)
Value
50
2.5
Unit
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV)= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
T1620 T1630 Unit
IGT VD=12V (DC) RL=33
VGT VD=12V (DC) RL=33
Tj= 25°C
Tj= 25°C
I-II-III
I-II-III
MAX
MAX
20 30
1.5
mA
V
VGD
VD=VDRM RL=3.3k
Tj= 125°C I-II-III MIN
0.2
V
tgt VD=VDRM IG =
500mA dlG/dt= 3Aµs
Tj= 25°C I-II-III TYP
2
µs
IH * IT= 250mA Gate open
Tj= 25°C
MAX 35
50
VTM *
IDRM
IRRM
ITM= 22.5A tp= 380µs
VDRM rated
VRRM rated
Tj= 25°C
Tj= 25°C
Tj= 125°C
MAX
MAX
MAX
1.5
10
2
V
µA
mA
dV/dt *
Linear slope up to
Tj= 125°C
VD=67%VDRM Gate open
MIN 200
300 V/µs
(dV/dt)c * (dI/dt)c = 9 A/ms (see note) Tj= 125°C
MIN 10
20 V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
Note : In usual applications where (dI/dt)c is below 9 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use a
snuber R-C network accross T1620W / T1630W triacs.
2/5



STMicroelectronics Electronic Components Datasheet

T1630-600W Datasheet

(T1620-600W/700W / T1630-600W) Snubberless Triac

No Preview Available !

T1630-600W pdf
T1620-600W / 1620-700W and T1630-600W
Fig. 1: Maximum power dissipation versus RMS
on-state current.
Fig. 2: Correlation between maximum power dissi-
pation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
P(W)
25
180 O
= 180o
20 = 120o
= 90o
15
= 60o
10 = 30 o
5
I T(RMS) (A)
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
Fig. 3: RMS on-state current versus case temper-
ature.
P (W)
25
20
15
10
Tcase (oC)
Rth = 0 o C/W
1 o C/W
2 o C/W
4 o C/W
-60
-70
-80
-90
-100
5 -110
Tamb (oC)
-120
0
0 20 40 60 80 100 120 140
Fig. 4: Thermal transient impedance junction to
case and junction to ambient versus pulse dura-
tion.
I T(RMS)(A)
20
15
= 180o
10
5
Tcase (oC )
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature.
Igt[Tj]
Igt[Tj=25 o C]
2.6
2.4
2.2
2.0
Ih[Tj]
Ih[Tj=25 o C]
1.8 Igt
1.6
1.4
1.2 Ih
1.0
0.8
0.6
Tj(oC)
0.4
-40 -20 0 20 40 60 80 100 120 140
Zth/Rth
1
Zt h(j-c)
0.1
0.01
Zth( j-a)
1E-3
1E-2
1E-1 1 E +0 1E +1
tp (s)
1E+2 5E+2
Fig. 6: Non repetitive surge peak on-state current
versus number of cycles.
ITSM(A)
2 00
Tj initial = 25oC
1 50
1 00
50
Number of cycles
0
1 10 10 0 1000
3/5




Part Number T1630-600W
Description (T1620-600W/700W / T1630-600W) Snubberless Triac
Maker ST Microelectronics
Total Page 5 Pages
PDF Download
T1630-600W pdf
Download PDF File
T1630-600W pdf
View for Mobile






Related Datasheet

1 T1630-600W (T1620-600W/700W / T1630-600W) Snubberless Triac ST Microelectronics
ST Microelectronics
T1630-600W pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components