| Description | This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6 $0Y Order code STU80N4F6 Table 1. Device summary Marking Package 80N4F6 IPAK Packaging Tube February 2014 This is information on a product in full production. DocID02... |
| Features |
TAB
IPAK
3
2 1
Figure 1. Internal schematic diagram
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Order code STU80N4F6
VDS 40 V
RDS(on) max ID 6.3 mΩ 80 A
• Low gate charge • Very low on-resistance • High avalanche ruggedness Applications • Switching applications Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ Deep... |
| Datasheet |
 STU80N4F6 Datasheet - 620.96KB |
