| Description | This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing Internal reproducibility. The resulting transistor shows extremely high packing density for low onwww.DataSheet4U.com resistance, rugged avalanche characteristics and low gate charge. ... |
| Features |
Type STS15N4LLF3
■ ■ ■ VDSS 40V RDS(on) <0.005Ω ID 15A Optimal RDS(on)x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced SO-8 Description This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and theref... |
| Datasheet |
 STS15N4LLF3 Datasheet - 329.79KB |
