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STRH12P10 STMicroelectronics (https://www.st.com/) Rad-Hard P-channel Power MOSFET

Description The STRH12P10 is a P-channel Power MOSFET able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE). Qualified as per ESCC detail specification No. 5205/029 and available in TO-257AA hermetic package, it is specifically recommended for space and harsh environment ...
Features VDS ID 100 V 12 A
• Fast switching
• 100% avalanche tested
• Hermetic package
• 100 krad TID
• SEE radiation hardened RDS(on) typ. 265 mΩ Qg 40 nC Description The STRH12P10 is a P-channel Power MOSFET able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the tota...

Datasheet PDF File STRH12P10 Datasheet - 415.36KB

STRH12P10  






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