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STMicroelectronics Electronic Components Datasheet

STPS60170CT Datasheet

High voltage power Schottky rectifier

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STPS60170CT pdf
STPS60170C
High voltage power Schottky rectifier
Datasheet - production data
Features
High junction temperature capability
Good trade-off between leakage current and
forward voltage drop
Low leakage current
Low thermal resistance
Avalanche capability specified
High frequency operation
ECOPACK®2 compliant component
Description
This dual diode Schottky rectifier is suited for
high frequency switched mode power supplies.
Packaged in TO-220AB this device is intended
for use to enhance the reliability of the
application.
Table 1: Device summary
Symbol
Value
IF(AV)
VRRM
Tj (max.)
VF (typ.)
2 x 30 A
170 V
175 °C
0.76 V
January 2018
DocID11642 Rev 3
This is information on a product in full production.
1/8
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STMicroelectronics Electronic Components Datasheet

STPS60170CT Datasheet

High voltage power Schottky rectifier

No Preview Available !

STPS60170CT pdf
Characteristics
STPS60170C
1 Characteristics
Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value Unit
VRRM
IF(RMS)
IF(AV)
Repetitive peak reverse voltage
Forward rms current
Average forward current δ = 0.5,
square wave
Per diode
TC = 150 °C
Per device
170 V
45 A
30
A
60
IFSM Surge non repetitive forward current
tp = 10 ms
sinusoidal
270 A
PARM
Tstg
Tj
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature (1)
tp = 10 µs,
Tj = 125 °C
985
-65 to +175
175
W
°C
Notes:
(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Symbol
Rth(j-c)
Rth(c)
Table 3: Thermal parameters
Parameter
Junction to case
Per diode
Total
Coupling
Max. value
1.0
0.7
0.4
Unit
°C/W
When the diodes 1 and 2 are used simultaneously:
ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
Symbol
IR(1)
VF(2)
Table 4: Static electrical characteristics (per diode)
Parameter
Test conditions
Min. Typ.
Reverse leakage current
Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 30 A
IF = 60 A
-
-8
-
- 0.72
- 0.97
- 0.86
Max.
35
35
0.94
0.76
1.05
0.92
Unit
µA
mA
V
Notes:
(1)Pulse test: tp = 5 ms, δ < 2%
(2)Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.60 x IF(AV) + 0.0053 x IF2(RMS)
2/8 DocID11642 Rev 3


Part Number STPS60170CT
Description High voltage power Schottky rectifier
Maker STMicroelectronics
Total Page 8 Pages
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