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STMicroelectronics Electronic Components Datasheet

STP9NB60 Datasheet

PowerMesh MOSFET

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STP9NB60 pdf
STP9NB60
® STP9NB60FP
N - CHANNEL 600V - 0.7- 9A TO-220/TO220FP
PowerMESHMOSFET
TYPE
VDSS
RDS(on)
ID
ST P9N B60
ST P9N B60 FP
600 V
600 V
< 0.8
< 0.8
9.0 A
9.0 A
s TYPICAL RDS(on) = 0.7
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
V DS
V DGR
VGS
ID
ID
IDM ()
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (cont inuous) at Tc = 25 oC
Drain Current (cont inuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating F actor
dv/dt(1) Peak Diode Recovery voltage slope
VISO Insulation Withstand Voltage (DC)
Ts tg St orage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
January 2000
Value
STP9NB60 STP9NB60FP
600
600
± 30
9.0 9.0(*)
5.7 5.7(*)
36 36
125 40
1.0 0.32
4.5 4.5
2000
-65 to 150
150
( 1) ISD 9A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
Un it
V
V
V
A
A
A
W
W /o C
V/ns
V
oC
oC
1/9


STMicroelectronics Electronic Components Datasheet

STP9NB60 Datasheet

PowerMesh MOSFET

No Preview Available !

STP9NB60 pdf
STP9NB60/FP
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1.0
TO-220FP
3.12
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
9
850
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
Pa ram et e r
Test Conditions
Dr ain- s ou rc e
Breakdown Voltage
ID = 250 µ A VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Tc = 125 oC
Min.
600
Typ. Max.
1
50
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
Pa ram et e r
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 3 A
Resistance
On Stat e Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
3
T yp.
4
Max.
5
Unit
V
0.7 0.8
9.0 A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
Pa ram et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Cap a ci t an c e
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 4.5 A
Min.
3.0
T yp.
6.5
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
1480
210
25
1924
273
33
pF
pF
pF
2/9


Part Number STP9NB60
Description PowerMesh MOSFET
Maker ST Microelectronics
Total Page 9 Pages
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