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STMicroelectronics Electronic Components Datasheet

STP9NB50 Datasheet

PowerMesh MOSFET

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STP9NB50 pdf
STP9NB50
STP9NB50FP
N-CHANNEL 500V - 0.75 - 8.6 A TO-220/TO-220FP
PowerMeshMOSFET
TYPE
VDSS
RDS(on)
ID
STP9NB50
500 V < 0.85 8.6 A
STP9NB50FP
500 V < 0.85 4.9 A
s TYPICAL RDS(on) = 0.75
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM (q)
PTOT
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k)
Gate- source Voltage
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
()Pulse width limited by safe operating area
May 2000
Value
STP9NB50 STP9NB50FP
500
500
±30
8.6
4.9
5.4 3.1
34.4 34.4
125 40
1 0.32
4.5 4.5
- 2000
–65 to 150
150
(1)ISD<9A, di/dt<200A/µ, VDD<V(BR)DSS,TJ<TJMAX
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
1/9


STMicroelectronics Electronic Components Datasheet

STP9NB50 Datasheet

PowerMesh MOSFET

No Preview Available !

STP9NB50 pdf
STP9NB50/FP
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1
TO-220FP
3.13
62.5
0.5
300
°C/W
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
8.6
520
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
500
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
ID(on)
On State Drain Current
Test Conditions
VDS = VGS, ID = 250 µA
VGS = 10V, ID = 4.3 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
3
Typ.
4
0.75
Max.
5
0.85
Unit
V
8.6 A
DYNAMIC
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 4.3 A
Min.
VDS = 25V, f = 1 MHz, VGS = 0
Typ.
5.7
1250
175
20
Max.
Unit
S
pF
pF
pF
2/9


Part Number STP9NB50
Description PowerMesh MOSFET
Maker ST Microelectronics
Total Page 9 Pages
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