| Description | These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. TAB 3 1 D²PAK TAB 3 1 DPAK Figure 1. Internal schematic diagram $ 4!" OR ' Table 1. Device summary Order codes STB155N3LH6 STD155N3LH6 Marking 155N3LH6 3 !-V Packag... |
| Features |
Order codes
STB155N3LH6 STD155N3LH6
VDSS 30 V
RDS(on) max
3.0 mΩ
1. Current limited by package
■ 100% avalanche tested ■ Logic level drive ID(1) PTOT 80 A 110 W Applications ■ Switching applications ■ Automotive Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a... |
| Datasheet |
 STD155N3LH6 Datasheet - 0.96MB |
