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STMicroelectronics Electronic Components Datasheet

STAP85050 Datasheet

RF power transistor

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STAP85050 pdf
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PD20010-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Features
Excellent thermal stability
Common source configuration
POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V
Plastic package
ESD protection
In compliance with the 2002/95/EC european
directive
PowerSO-10RF
(formed lead)
Description
The PD20010-E is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 13.6 V in common source mode at
frequencies of up to 1 GHz. PD20010-E boasts
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
PD20010-E’s superior linearity performance
makes it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note
AN1294).
PowerSO-10RF
(straight lead)
Figure 1. Pin connection
Source
Gate
Drain
Table 1. Device summary
Order codes
PD20010-E
PD20010S-E
PD20010TR-E
PD20010STR-E
March 2009
Packages
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Rev 1
Packing
Tube
Tube
Tape and reel
Tape and reel
1/12
www.st.com
12


STMicroelectronics Electronic Components Datasheet

STAP85050 Datasheet

RF power transistor

No Preview Available !

STAP85050 pdf
Contents
Contents
PD20010-E
1
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Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.3 ESD protection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.4 Moisture sensitivity level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12


Part Number STAP85050
Description RF power transistor
Maker ST Microelectronics
Total Page 12 Pages
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