RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
■ Excellent thermal stability
■ Common source configuration
■ POUT = 45 W with 13 dB gain @ 945 MHz / 28 V
■ ST advanced PowerSO-10RF-STAP package
The STAP57045 is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 28 V in common source mode at
frequencies of up to 1 GHz. STAP57045 boasts
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in STAP1
plastic RF power package.
STAP package has been specially optimized for
RF needs and offers excellent performances and
ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
Figure 1. Pin connection
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.