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STMicroelectronics Electronic Components Datasheet

STAP57045 Datasheet

RF power transistor

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STAP57045 pdf
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STAP57045
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
Excellent thermal stability
Common source configuration
POUT = 45 W with 13 dB gain @ 945 MHz / 28 V
ST advanced PowerSO-10RF-STAP package
Description
The STAP57045 is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 28 V in common source mode at
frequencies of up to 1 GHz. STAP57045 boasts
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in STAP1
plastic RF power package.
STAP package has been specially optimized for
RF needs and offers excellent performances and
ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
STAP1
Figure 1. Pin connection
!-
DRAIN
GATE
SOURCE
!-
Table 1.
Device summary
Order code
STAP57045
Package
STAP1
Packing
Tube
March 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/17
www.st.com
17


STMicroelectronics Electronic Components Datasheet

STAP57045 Datasheet

RF power transistor

No Preview Available !

STAP57045 pdf
Contents
Contents
STAP57045
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Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6.1 STAP57045 (VDS = 13.5V IDS = 1.5A) . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6.2 STAP57045 (VDS = 28 V, IDS = 1.5 A) . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/17


Part Number STAP57045
Description RF power transistor
Maker ST Microelectronics
Total Page 17 Pages
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