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STMicroelectronics Electronic Components Datasheet

Q1NC45 Datasheet

STQ1NC45

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Q1NC45 pdf
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STD2NC45-1
STQ1NC45
N-CHANNEL 450V - 4.1- 1.5 A IPAK / TO-92
SuperMESH™Power MOSFET
TYPE
VDSS RDS(on)
ID
STD2NC45-1
STQ1NC45
450 V < 4.5 1.5 A
450 V < 4.5 0.5 A
s TYPICAL RDS(on) = 4.1
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s NEW HIGH VOLTAGE BENCHMARK
Pw
30 W
3.1 W
IPAK
3
2
1
TO-92
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
TO-92 (Ammopack)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITCH MODE LOW POWER SUPPLIES
(SMPS)
s LOW POWER, LOW COST CFL (COMPACT
FLUORESCENT LAMPS)
s LOW POWER BATTERY CHARGERS
ORDERING INFORMATION
SALES TYPE
MARKING
STD2NC45-1
D2NC45
STQ1NC45
Q1NC45
STQ1NC45-AP
Q1NC45
wwJuwne.2D0a03taSheet4U.com
PACKAGE
IPAK
TO-92
TO-92
PACKAGING
TUBE
BULK
AMMOPAK
1/11



STMicroelectronics Electronic Components Datasheet

Q1NC45 Datasheet

STQ1NC45

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Q1NC45 pdf
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STD2NC45-1, STQ1NC45
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 0.5A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
THERMAL DATA
Rthj-case
Rthj-amb
Rthj-lead
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
Maximum Lead Temperature For Soldering
Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
STD2NC45-1
STQ1NC45
450
450
± 30
1.5 0.5
0.95 0.315
62
30 3.1
0.24 0.025
3
-65 to 150
-65 to 150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
IPAK
4.1
100
275
TO-92
120
40
260
°C/W
°C/W
°C/W
°C
Max Value
IPAK
1.5
TO-92
25
Unit
A
mJ
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STMicroelectronics Electronic Components Datasheet

Q1NC45 Datasheet

STQ1NC45

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Q1NC45 pdf
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STD2NC45-1, STQ1NC45
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
450
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±100
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250µA
2.3 3 3.7
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 0.5 A
4.1 4.5
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 0.5 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
1.1
160
27.5
4.7
Max.
Unit
V
µA
µA
nA
V
Unit
S
pF
pF
pF
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 225 V, ID = 0.5 A
RG = 4.7VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 360V, ID = 1.5 A,
VGS = 10V, RG = 4.7
Min.
Typ.
6.7
4
7
1.3
3.2
Max.
10
Unit
ns
ns
nC
nC
nC
Test Conditions
VDD = 360V, ID = 1.5 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
Min.
Typ.
8.5
12
18
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 1.5 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.5 A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
225
530
4.7
Max.
1.5
6.0
1.6
Unit
A
A
V
ns
µC
A
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Part Number Q1NC45
Description STQ1NC45
Maker STMicroelectronics
Total Page 11 Pages
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