| Description | STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI www.DataSheet4U.com s s s s s s s s s V DSS 50 V 50 V R DS( on) < 0.055 Ω < 0.055 Ω ID 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY LOGIC LEVEL COMPATIBLE INPUT o 175 C OPERATING TE... |
| Features |
c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Value STP32N05LFI 50 50 ± 15 32 22 128 105 0.7 -65 to 175 175 19 13 128 40 0.27 2000
Unit
V V V A A A W W/o C V
o o
C C
( •) Pulse width limited by safe operating area ... |
| Datasheet |
 P32N05L Datasheet - 233.82KB |
