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STMicroelectronics Electronic Components Datasheet

M22100 Datasheet

4 X 4 CROSSPOINT SWITCH WITH CONTROL MEMORY

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M22100 pdf
M22100
4 X 4 CROSSPOINT SWITCH WITH CONTROL MEMORY
. LOW ON RESISTANCE – 75 TYP. AT
VDD = 12 V
. ”BUILT-IN” CONTROL LATCHES
. LARGE ANALOG SIGNAL CAPABILITY ± VDD/2
. TRANSMITS SIGNALS UP TO 10 MHz
. MATCHED SWITCH CHARACTERISTICS
RON = 18 TYP. AT VDD – VSS = 12 V.
. HIGH LINEARITY : – 0.5 % DISTORTION (typ.)
.. AT f = 1 KHz, VIN = 5 V PEAK TO PEAK, VDD -
VSS = 10 V, RL = 10 K
STANDARD COS/MOS NOISE IMMUNITY
100 % TESTED FOR QUIESCENT CURRENT
Therefore, all switches must be turned off by putting
the strobe high and data-in-low, and then address-
ing all switches in succession.
EY
(Plastic Package)
F
(Ceramic Package)
DESCRIPTION
The M22100 combines a 4 x 4 array of crosspoints
(transmission gates) with a 4-line-to-16-line decoder
and 16 latch circuits. Any one of the sixteen trans-
mission gates (crosspoints) can be selected by ap-
plying the appropriate four line address. The
selected transmission gate can be turned on or off
by applying a logical one or zero, respectively, to the
data input and strobing the strobe input to a logical
one. Any number of the transmission gates can be
ON simultaneously.
ORDER CODES :
M22100 B1
M22100 F1
PIN CONNECTIONS
When the required operating power is applied to the
22100, the states of the 16 switches are indetermi-
nate.
FUNCTIONAL DIAGRAM
September 1988
TRUTH TABLE
Address
ABCD
0000
1000
0100
1100
0010
1010
0110
1110
Select
X1 Y1
X2 Y1
X3 Y1
X4 Y1
X1 Y2
X2 Y2
X3 Y2
X4 Y2
Address
ABCD
0001
1001
0101
1101
0011
1011
0111
1111
Select
X1 Y3
X2 Y3
X3 Y3
X4 Y3
X1 Y4
X2 Y4
X3 Y4
X4 Y4
1/13


STMicroelectronics Electronic Components Datasheet

M22100 Datasheet

4 X 4 CROSSPOINT SWITCH WITH CONTROL MEMORY

No Preview Available !

M22100 pdf
M22100
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Unit
VDD * Supply Voltage: Ceramic Types
Plastic Types
-0.5 to +20
-0.5 to +18
V
V
Vi Input Voltage
II DC Input Current (any one input)
-0.5 to VDD + 0.5
± 10
V
mA
Ptot Total Power Dissipation (per package)
Dissipation per Output Transistor
200 mW
for Top = Full Package Temperature Range
100 mW
Top Operating Temperature: Ceramic Types
Plastic Types
-55 to +125
-40 to +85
oC
oC
Tstg Storage Temperature
-65 to +150
oC
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress ratingonly and functional
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for external periods may affect device reliability.
* All voltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
VDD
VI
Top
Parameter
Supply Voltage: Ceramic Types
Plastic Types
Input Voltage
Operating Temperature: Ceramic Types
Plastic Types
Value
3 to 18
3 to 15
0 to VDD
-55 to +125
-40 to +85
Unit
V
V
V
oC
oC
LOGIC DIAGRAM
2/13


Part Number M22100
Description 4 X 4 CROSSPOINT SWITCH WITH CONTROL MEMORY
Maker STMicroelectronics
Total Page 13 Pages
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