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STMicroelectronics Electronic Components Datasheet

L6353 Datasheet

SMART DRIVER FOR POWER MOS & IGBT

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L6353 pdf
® L6353
SMART DRIVER FOR POWER MOS & IGBT
PEAK HIGH OUTPUT CURRENT CAPABIL-
ITY (+8A)
WIDE SUPPLY VOLTAGE RANGE (12.5 TO
18V)
0 TO –7.5V NEGATIVE BIAS VOLTAGE SUP-
PLY RANGE
OVER CURRENT AND DESATURATION
PROTECTION OF THE EXTERNAL POWER
DEVICE (EXTERNALLY PROGRAMMABLE)
LATCH-UP PROTECTION (FOR IGBT)
TWO STEPS TURN-ON (PROGRAMMABLE)
PROTECTION AGAINST POSITIVE SUPPLY
UNDER-VOLTAGE
INPUT COMPATIBLE WITH OPTOCOUPLER
OR PULSE TRANSFORMER
PROGRAMMABLE TURN-ON DELAY
THERMAL PROTECTION WITH ON-CHIP
OVER-TEMPERATURE ALARM AND TURN-
OFF PROCEDURE
OPERATING FREQUENCY UP TO 100kHz
BLOCK DIAGRAM
DIP16
SO16
ORDERING NUMBERS: L6353 (DIP)
L6353D (SO)
DESCRIPTION
The L6353 device is a smart driver, with all the
drive and protection know-how ”on board”.
Available in both DIP and SO package, it can be
triggered with a logic level or with the signal from an
optocoupler or a pulse transformer. It filters parasitic
input signals and drives any MOS or IGBT.
SELECT
INPUT
INV_OUT
ALARM
2.5V
300µA
+
1.25V
+
FILTER
200ns
DELAY
+
3.15V
THERMAL
SHUTDOWN
1.25V
3.75V
LOGIC
COM
SUPPLY
UV SENSE
REFERENCES
VCC
REF
VPOS
OUT1
CLAMPING
3.15V
+
+
+
4V
7.5V
D94IN106B
OUT1
CLAMP_PROG
OUT2
VSS
MON_DELAY
ON_SENSE
ON_LEV_PROG
February 2000
1/11


STMicroelectronics Electronic Components Datasheet

L6353 Datasheet

SMART DRIVER FOR POWER MOS & IGBT

No Preview Available !

L6353 pdf
L6353
DESCRIPTION (continued)
It monitors the on-state voltage drop of the driven
power device and protects it against overload and
short circuit.
The on-state voltage drop level is externally pro-
grammable from 5 to 15V. This function is inhib-
ited during the turn-on of the external power de-
vice for an externally programmable period.
An internal inhibition time of 200ns avoids false
triggering.
PIN CONNECTION (top view)
Overload or overheating are signalled on an
alarm output. If temperature continues to increase
the power output is switched off and maintained
in the off-state until the temperature decreases
below the low threshold. A programmable turn-on
delay avoids cross conduction in bridge configu-
rations.
To preserve the external power device (especially
IGBT) from the risk of latch-up, the gate voltage
can be risen in two different steps (of which the
first is externally programmable from 7 to 11V).
OUT1
VCC
VPOS
CLAMP_PROG
INV_OUT
ALARM
MON_DELAY
VREF
1 16
2 15
3 14
4 13
5 12
6 11
7 10
89
D94IN113A
OUT2
COM
VSS
ON_SENSE
ON_LEV_PROG
SELECT
DELAY
INPUT
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
VSS
VPOS - VOUT1
VOUT2 - VSS
VEXT1
VEXT2
IDELAY
IMON_DELAY
VON_SENSE
IOUT1
IOUT2
IINV_OUT
IALARM
Ptot
Tamb
Tstg
Parameter
Supply Voltage referred to COM pin
Negative Supply Voltage referred to COM pin
Collector-Emitter Voltage of High Side NPN
Drain-Source Voltage of Low Side DMOS
Externally Forced Voltage (pin 9)
Externally Forced Voltage (pins 4,7,10, 11, 12)
Sink Current pin Delay
Sink Current Pin Mon_Delay
Voltage on ON_SENSE Pin
Positive Output Current (tp 1ms) (peak)
Negative Output Current (tp 1ms) (peak)
Output Current in INV_OUT Pin
Output Current in ALARM Pin
Total Power Dissipation
Operating Temperature Range
Storage Temperature
THERMAL DATA
Symbol
Parameter
Rthj-ambient Thermal Resistance Junction-ambient
Value
20
– 8 to 0
25
25
-0.3 to VCC
-0.3 to 7
3
3
VSS-0.3 to VCC
8
8
±20
±20
internally limited
-25 to +85
-50 to +150
Unit
V
V
V
V
V
V
mA
mA
V
A
A
mA
mA
°C
°C
DIP16
Max 80
SO16
90
Unit
°C/W
2/11


Part Number L6353
Description SMART DRIVER FOR POWER MOS & IGBT
Maker STMicroelectronics
Total Page 11 Pages
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