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STMicroelectronics Electronic Components Datasheet

DA108S1 Datasheet

DIODE ARRAY

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DA108S1 pdf
®
Application Specific Discretes
A.S.D.TM
APPLICATION
Protection of logic side of ISDN S-interface.
Protection of I/O lines of microcontroller.
Signal conditioning.
DA108S1
DA112S1
DIODE ARRAY
SO8
FEATURES
ARRAY OF 8 OR 12 DIODES
LOW INPUT CAPACITANCE
SUITABLE FOR DIGITAL LINE PROTECTION
FUNCTIONAL DIAGRAM : DA108S1
I/O 1 1
I/O 2 2
8 REF 1
7 REF 1
DESCRIPTION
ARRAY of 8 or 12 diodes configured by cells of 2
diodes, each cell being used to protect signal line
from transient overvoltages by clamping action.
I/O 3 3
I/O 4 4
6 REF 2
5 REF 2
COMPLIES WITH FOLLOWING STANDARDS :
IEC1000-4-22level 4: 15kV (air discharge)
8kV (contact discharge)
FUNCTIONAL DIAGRAM : DA112S1
I/O 1 1
8 REF 1
I/O 2 2
7 I/O 6
I/O 3 3
6 REF 2
I/O 4 4
5 I/O 5
March 1998 - Ed:4
1/5


STMicroelectronics Electronic Components Datasheet

DA108S1 Datasheet

DIODE ARRAY

No Preview Available !

DA108S1 pdf
DA108S1 / DA112S1
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
Parameter
VRRM
IPP
P
Repetitivepeak reverse voltage(forone single diode)
Repetitive peak forward current *
8/20 µs
Power dissipation
Tstg
Storage temperature range
Tj Maximum operating junction temperature
TL Maximum lead temperature for soldering during 10s.
* The surge is repeated after the device returns to ambient temperature
Value
18
12
0.73
- 55 to + 150
150
260
Unit
V
A
W
°C
°C
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-a)
Junction to ambient
Value
170
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
Parameter
VFP Peak forward voltage IPP = 12A, 8/20 µs
VF Forward voltage
IF = 50 mA
IR Reverse leakage current VR = 15V
DA108S1
DA112S1
Max.
9
12
1.2
2
Unit
V
V
µA
2/5
®


Part Number DA108S1
Description DIODE ARRAY
Maker STMicroelectronics
Total Page 5 Pages
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