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STMicroelectronics Electronic Components Datasheet

D17N06 Datasheet

STD17N06

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D17N06 pdf
STD17N05
STD17N06
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STD17N05
STD17N06
VDSS
50 V
60 V
R DS( on)
< 0.085
< 0.085
ID
17 A
17 A
s TYPICAL RDS(on) = 0.06
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC
ID Drain Current (continuous) at T c = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
December 1996
3
2
1
IPAK
TO-251
(Suffix ”-1”)
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
Val ue
STD17N05
STD17N06
50 60
50 60
± 20
17
12
68
55
0 .3 7
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
1/10


STMicroelectronics Electronic Components Datasheet

D17N06 Datasheet

STD17N06

No Preview Available !

D17N06 pdf
STD17N05/STD17N06
THERMAL DATA
Rthj-case
Rthj- amb
Rt hc- sin k
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
2 .7 3
100
1. 5
275
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
IA R
EAS
EAR
IA R
Pa ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(st arting Tj = 25 oC, ID = IAR, VD D = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
17
60
15
12
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VG S = 0
for STD17N05
for STD17N06
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
IG SS
Gate-body Leakage
Current (VD S = 0)
VGS = ± 20 V
Min.
50
60
Typ. Max. Unit
1
10
± 100
V
V
µA
µA
nA
ON ()
Symb ol
VG S(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 8.5 A
R esist anc e
On St ate Drain Current VDS > ID( on) x RD S(on) max
VGS = 10 V
Min.
2
Typ.
2.9
0. 06
Max.
4
0. 085
Unit
V
17 A
DYNAMIC
Symb ol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID( on) x RD S(on) max ID = 8. 5 A
Min.
5
Typ.
8
Max.
Unit
S
VDS = 25 V f = 1 MHz VG S = 0
600 800
250 350
80 120
pF
pF
pF
2/10


Part Number D17N06
Description STD17N06
Maker STMicroelectronics
Total Page 10 Pages
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