http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



STMicroelectronics Electronic Components Datasheet

D15 Datasheet

Memory Micromodules General Information for D1/ D2 and C Packaging

No Preview Available !

D15 pdf
CCD Vertical Clock Driver
CXD1267AN
Description
The CXD1267AN is a vertical clock driver for CCD
image sensors. This IC is the successor of the
CXD1250N with attractive features.
Power consumption is reduced approximately 30%
for the CXD1267AN version.
20 pin SSOP (Plastic)
Features
1) Substrate voltage (Vsub) generator is built-in.
Variable Vsub in the range of 4.0V to 18.5V.
Reduction of peripheral parts saves space.
2) Only two power supplies (+15V and –8.5V) are
needed.
3) 3.3V clock interface is acceptable.
4) 20-pin SSOP package is used.
5) Low power consumption
90mW (CXD1267N)
62mW (CXD1267AN)
approximately 30% reduction
Appllications
CCD cameras
Structure
CMOS
Absolute Maximum Ratings (Ta = 25°C)
Supply voltage
VL 0 to –10
Supply voltage
VH VL – 0.3 to 2VL + 35
Supply voltage
VM VL – 0.3 to 3.0
Input voltage
VI VL – 0.3 to VH + 0.3
Output voltage (V2, V4) MVφ VL – 0.3 to VM + 0.3
Output voltage (V1, V3) HVφ VL – 0.3 to VH + 0.3
Output voltage (VSHT)
HHVφ VL – 0.3 to VH + 0.3
Operational amplifier output current
IDCOUT
±5
Operating temperature
Topr
–25 to +85
Storage temperature Tstg –40 to +125
V
V
V
V
V
V
V
mA
°C
°C
Recommended Operating Conditions
Supply voltage
VH
Supply voltage
VM
Supply voltage
VL
Input voltage (except for pin 3)
VI
Operational amplifier input voltage
VIOP
Operating temperature
Topr
14.5 to 15.5
0
–6.0 to –9.0
0 to 6.0
1.0 to 4.5
–20 to +75
V
V
V
V
V
°C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E94X38-PK



STMicroelectronics Electronic Components Datasheet

D15 Datasheet

Memory Micromodules General Information for D1/ D2 and C Packaging

No Preview Available !

D15 pdf
Block Diagram and Pin Configuration (Top View)
CPP3
1
VH
2
Charge Pump
CPP1
20
CPP2 19
DCIN
3
4 XSHT
XV2
5
XV1
6
XSG1
7
XV3
8
XSG2
9
XV4
10
DCOUT
18
VSHT
17
VL 16
Vφ2
15
Vφ1
14
VM 13
Vφ3
12
Vφ4
11
Pin Description
Pin No. Symbol
1 CPP3
2 VH
3 DCIN
4 XSHT
5 XV2
6 XV1
7 XSG1
8 XV3
9 XSG2
10 XV4
11 Vφ4
12 Vφ3
13 VM
14 Vφ1
15 Vφ2
16 VL
17 VSHT
18 DCOUT
19 CPP2
20 CPP1
I/O Description
O Charge pump
— Power supply (15V)
I Operational amplifier input
I Output control (VSHT)
I Output control (Vφ2)
I Output control (Vφ1)
I Output control (Vφ1)
I Output control (Vφ3)
I Output control (Vφ3)
I Output control (Vφ4)
O High-voltage output (2 levels: VM, VL)
O High-voltage output (3 levels: VH, VM, VL)
— GND
O High-voltage output (3 levels: VH, VM, VL)
O High-voltage output (2 levels: VM, VL)
— Power supply (–8.5V)
O High-voltage output (2 levels: VH, VL)
O Operational amplifier output
— Charge pump
— Charge pump
–2–
CXD1267AN



STMicroelectronics Electronic Components Datasheet

D15 Datasheet

Memory Micromodules General Information for D1/ D2 and C Packaging

No Preview Available !

D15 pdf
CXD1267AN
Truth Table
Input
XV1, 3 XSG1, 2 XV2, 4
LLX
HL X
LHX
HH X
XX L
XXH
XXX
XXX
XSHT
X
X
X
X
X
X
L
H
Vφ1, 3
VH
Z
VM
VL
X
X
X
X
Output
Vφ2, 4
X
X
X
X
VM
VL
X
X
VSHT
X
X
X
X
X
X
VH
VL
X: Don't care
Z: High impedance
Electrical Characteristics
DC Characteristics
(Unless otherwise specified, Ta = 25°C, VH = 15V, VM = GND, VL = –8.5V)
Item
Symbol
Condition
Min. Typ. Max. Unit
High level input voltage
VIH
2.3 —
—V
Low level input voltage
VIL
— — 1.3 V
High level output voltage
VOH IO = –20µA
14.9 15.0
V
Middle level output voltage VOM1 IO = 20µA
— 0.0 0.1 V
Middle level output voltage VOM2 IO = –20µA
–0.1 0.0 — V
Low level output voltage
VOL IO = 20µA
–8.5 –8.4
V
–1 ICPP3 0mA
Charge pump output voltage VCPP3 IDCOUT = 0mA, Ta = –20 to 75°C 20 — — V
VIOP = 4.5V
Input current
II VI = VL to 5V
Operating supply current IH 1
Operating supply current IL 1
–1.0 0.0
— 1.4
–6.0 –5.0
1.0 µA
2.0 mA
— mA
Output current
IOL Vφ1 to 4 = –8.0V
25 — — mA
Output current
IOM1 Vφ1 to 4 = –0.5V
— — –10 mA
Output current
IOM2 Vφ1, 3 = 0.5V
9 — — mA
Output current
IOH Vφ1, 3 = 14.5V
— — –12 mA
Output current
IOSL VSHT = –8.0V
12 — — mA
Output current
IOSH VSHT = 14.5V
— — –7 mA
Operational amplifier gain G
IDCOUT = –200/+100µA
× 4.40 —
Gain error
Ta = –20 to 75°C2
G IDCOUT = –200/+100µA
VIOP = 1.0 to 4.5V
–3 — +3 %
1 See Measurement Circuit. Shutter speed: 1/10000.
2 See Operational Amplifier Gain Characteristic.
Note) Current directions: + indicates the direction flowing to IC; – indicates the direction flowing from IC
–3–




Part Number D15
Description Memory Micromodules General Information for D1/ D2 and C Packaging
Maker STMicroelectronics
Total Page 8 Pages
PDF Download
D15 pdf
Download PDF File
D15 pdf
View for Mobile






Related Datasheet

1 D10 Memory Micromodules General Information for D1/ D2 and C Packaging STMicroelectronics
STMicroelectronics
D10 pdf
2 D1000 2SD1000 Renesas
Renesas
D1000 pdf
3 D1001 2SD1001 Renesas
Renesas
D1001 pdf
4 D1001UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED Seme LAB
Seme LAB
D1001UK pdf
5 D1002UK METAL GATE RF SILICON FET Seme LAB
Seme LAB
D1002UK pdf
6 D1003UK METAL GATE RF SILICON FET Seme LAB
Seme LAB
D1003UK pdf
7 D1004 METAL GATE RF SILICON FET Seme LAB
Seme LAB
D1004 pdf
8 D10040180GT GaAs Power Doubler PDI
PDI
D10040180GT pdf
9 D10040180GTH GaAs Power Doubler PDI
PDI
D10040180GTH pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components