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STMicroelectronics Electronic Components Datasheet

60N3LH5 Datasheet

N-channel Power MOSFET

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60N3LH5 pdf
STD60N3LH5
STP60N3LH5, STU60N3LH5
N-channel 30 V, 0.0072 , 48 A DPAK, IPAK, TO-220
STripFET™ V Power MOSFET
Features
Type
STD60N3LH5
STP60N3LH5
STU60N3LH5
VDSS
30 V
30 V
30 V
RDS(on) max
0.008
0.0084
0.0084
ID
48 A
48 A
48 A
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Application
Switching applications
Description
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM.
3
2
1
TO-220
3
1
DPAK
3
2
1
IPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STD60N3LH5
STP60N3LH5
STU60N3LH5
Marking
60N3LH5
60N3LH5
60N3LH5
Package
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
April 2009
Doc ID 14079 Rev 3
1/16
www.st.com
16



STMicroelectronics Electronic Components Datasheet

60N3LH5 Datasheet

N-channel Power MOSFET

No Preview Available !

60N3LH5 pdf
Contents
Contents
STD60N3LH5, STP60N3LH5, STU60N3LH5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 Doc ID 14079 Rev 3



STMicroelectronics Electronic Components Datasheet

60N3LH5 Datasheet

N-channel Power MOSFET

No Preview Available !

60N3LH5 pdf
STD60N3LH5, STP60N3LH5, STU60N3LH5
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS=0)
VDS Drain-source voltage (VGS = 0) @ TJMAX
VGS
ID (1)
Gate-Source voltage
Drain current (continuous) at TC = 25 °C
ID
IDM (2)
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
EAS (3) Single pulse avalanche energy
Tj Operating junction temperature
Tstg Storage temperature
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj = 25 °C, Id = 24 A, Vdd = 12 V
Value
30
35
± 22
48
42.8
192
60
0.4
160
-55 to 175
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case
Rthj-amb
Tj
Thermal resistance junction-case max
Thermal resistance junction-case max
Maximum lead temperature for soldering purpose
Value
2.5
100
275
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
Unit
°C/W
°C/W
°C
Doc ID 14079 Rev 3
3/16




Part Number 60N3LH5
Description N-channel Power MOSFET
Maker STMicroelectronics
Total Page 16 Pages
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