| Description | This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. !-V Order codes STW19NM60N Table 1. Device summary M... |
| Features |
3 2 1
TO-247
Figure 1. Internal schematic diagram
$ 4!"
'
3
Order code
VDS (@Tjmax)
STW19NM60N 650 V
RDS(on) max.
ID PTOT
0.285 Ω 13 A 110 W
• Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications ... |
| Datasheet |
 19NM60 Datasheet - 1.00MB |
