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ST MICROELECTRONICS
ST MICROELECTRONICS

W18NB40 Datasheet Preview

W18NB40 Datasheet

STW18NB40

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STW18NB40
STH18NB40FI
N-CHANNEL 400V - 0.19 - 18.4 A TO-247/ISOWATT218
PowerMesh™ MOSFET
TYPE
VDSS
RDS(on)
ID
PRELIMINARY DATA
STW18NB40
STH18NB40FI
400 V
400 V
< 0.26
< 0.26
18.4 A
12.4 A
s TYPICAL RDS(on) = 0.19
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
3
2
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID
IDM (l)
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
June 2002
Value
STW18NB40 STH18NB40FI
400
400
±30
18.4 12.4
11.6 7.8
73.6 73.6
190 80
1.52 0.64
4.5 4.5
- 2000
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
(1)ISD<18.4A, di/dt<200A/µ, VDD<V(BR)DSS,TJ<TJMAX
1/7



ST MICROELECTRONICS
ST MICROELECTRONICS

W18NB40 Datasheet Preview

W18NB40 Datasheet

STW18NB40

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W18NB40 pdf
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STW18NB40/STH18NB40FI
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
TO-247
0.66
ISOWATT218
1.56
30
0.1
300
°C/W
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
18.4
450
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
400
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
VDS = VGS, ID = 250 µA
VGS = 10V, ID = 6.2 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
3
Typ.
4
0.19
Max.
5
0.26
Unit
V
18.4 A
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 9.2 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
9.3
2480
435
47
Max.
Unit
S
pF
pF
pF
2/7


Part Number W18NB40
Description STW18NB40
Maker ST MICROELECTRONICS
Total Page 7 Pages
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