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SFF75N10M Datasheet Preview

SFF75N10M Datasheet

N-Channel Power MOSFET

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SFF75N10M pdf
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SOLID STATE DEVICES, INC.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
DESIGNER'S DATA SHEET
FEATURES:
• Rugged construction with poly silicon gate
• low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input and transfer capacitance for easy paralleling
• Ceramic seals for improved hermeticity
• Hermetically sealed package
• TX, TXV and Space Level screening available
• Replaces: IXTH75N10Types
SFF75N10M
SFF75N10Z
75 AMP
100 VOLTS
0.025
N-CHANNEL
POWER MOSFET
TO-254 (M)
TO-254Z (Z)
MAXIMUM RATINGS
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Total Device Dissipation
Repetitive Avalanche Energy
@ TC = 25oC
@ TC = 55oC
SYMBOL
VDS
VGS
ID
Top & Tstg
R0JC
PD
EAR
VALUE
100
+ 20
561/
-55 to +150
0.83
150
114
30
UNIT
Volts
Volts
Amps
oC
oC/W
Watts
mJ
CASE OUTLINE: TO-254 (Sufix M)
Pin Out:
Ø..114399
Pin 1: Drain
Pin 2: Source
Pin 3: Gate .545
.535
.800
.790 .545
.535
.500 MIN
PIN 3
PIN 2
.155
.145
.305
.295
PIN 1
3x Ø..004355
.675±.010
.260
.240
.050
.040 SUFFIX: M
.155
.140
CASE OUTLINE: TO-254Z (Sufix Z)
Pin Out:
Pin 1: Drain
2x Ø..115400
.545
.535
2x
.140
.125
.555
.500
Pin 2: Source
Pin 3: Gate
2x
.275
.255
2x
.155
.145
1.090 .820 .545
1.050 .790 .535
PIN 3
PIN 2
.305
.295
PIN 1
3x
.045
.035
SUFFIX: Z
.285
.265
.260
.240
.055
.035
2x
.275
.255
2x
.190
.150
.155
.135
.170
MIN
SUFFIX: MD
SUFFIX: MU
2x
.190
.150
SUFFIX: ZD
.170
MIN
SUFFIX: ZU
Available with Glass or Ceramic Seals. Contact Factory for details.
NOTE: All specifications are subject to change without notification.
SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00153F
2x
.190
.150



SSDI
SSDI

SFF75N10M Datasheet Preview

SFF75N10M Datasheet

N-Channel Power MOSFET

No Preview Available !

SFF75N10M pdf
www.DataSSheFetF4U7.c5omN10M
SFF75N10Z
SOLID STATE DEVICES, INC.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified)
RATING
Drain to Source Breakdown Voltage
(VGS =0 V, ID = 250µA)
SYMBOL MIN
TYP
MAX
UNIT
BVDSS
100
-
-V
Drain to Source on State Resistance
(VGS = 10 V)
ID = 37.5A
ID = 75 A
RDS(on)
-
-
-
-
0.025
0.030
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10 V)
ID(on)
75
-
-A
Gate Threshold Voltage
(VDS = VGS, ID = 4mA)
VGS(th)
2
- 4.0 V
Forward Transconductance
(VDS > ID(on) X RDS (on) Max, IDS=50% rated ID)
gfs 25 30
- Smho
Zero Gate Voltage Drain Current
(VDS = max rated voltage, VGS = 0 V)
(VDS = 80% rated VDS, VGS = 0V, TA = 125oC)
IDSS
-
-
-
-
250
1000
µA
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
IGSS
-
-
-
-
+200
-200
nA
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off DelayTime
Fall Time
Diode Forvard Voltage
(IS = rated ID, VGS = 0V, TJ = 25oC)
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
NOTES:
VGS = 10 V
50% rated VDS
50% rated ID
VDD =50%
rated VDS
50% rated ID
RG = 6.2
VGS = 10V
Qg
Qgs
Qgd
td (on)
tr
td (off)
tf
-
-
-
-
-
-
-
160 260
16 70 nC
50 160
30 40
35
100
100
120
nsec
40 80
VSD
-
1.3 1.75 V
TJ =25oC
IF = 10A
di/dt = 100A/µsec
trr
QRR
-
120 200 nsec
--
VGS =0 Volts
Ciss
-
4500
-
VDS =25 Volts
Coss
-
1600
-
pF
f =1 MHz Crss - 800 -
1/ Maximum current limited by package, die rated at 75A.
NOTE: All specifications are subject to change without notification.
SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00153F


Part Number SFF75N10M
Description N-Channel Power MOSFET
Maker SSDI
Total Page 2 Pages
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