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SFF75N08M Datasheet Preview

SFF75N08M Datasheet

N-Channel Power MOSFET

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SFF75N08M pdf
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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
TO-254 and TO-254Z
Note 1: maximum current limited by package
configuration
Maximum Ratings
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current (package limited)
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
TO-254 (M)
SFF75N08M
SFF75N08Z
55 AMP (note 1) /75 Volts
8.5 mO
N-Channel Trench Gate MOSFET
Features:
Trench gate technology for high cell density
Lowest ON-resistance in the industry
Enhanced operating temperature range
Hermetically Sealed, Isolated Package
Low Total Gate Charge
Fast Switching
Enhanced replacement for IRF7MS2907
TX, TXV, S-Level screening available
Improved (RDS(ON) QG) figure of merit
@ TC = 25ºC
@ TC = 125ºC
@ TC = 25ºC
@ TC = 125ºC
@ L= 0.1 mH
@ L= 0.1 mH
@ TC = 25ºC
Symbol
VDSS
VGS
ID1
ID2
ID3
ID4
IAR
EAR
PD
TOP & TSTG
R0JC
Value
75
±20
55 (note 1)
55 (note 1)
175
75
75
280
210
-55 to +175
0.7
(typ 0.55)
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
TO-254Z (Z)
PIN 3
PIN 2
PIN 1
PIN 3
PIN 2
PIN 1
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0021A
DOC



SSDI
SSDI

SFF75N08M Datasheet Preview

SFF75N08M Datasheet

N-Channel Power MOSFET

No Preview Available !

SFF75N08M pdf
www.DataSheet4U.com
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 4/
Drain to Source Breakdown Voltage
Drain to Source On State Resistance
Gate Threshold Voltage
Gate to Source Leakage
Zero Gate Voltage Drain Current
Forward Transconductance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SFF75N08M
SFF75N08Z
Symbol Min Typ Max Units
VGS = 0V, ID = 250µA
VGS = 10V, ID = 30A, Tj= 25oC
VGS = 10V, ID = 30A, Tj=125oC
VGS = 10V, ID = 30A, Tj= 175oC
VDS = VGS, ID = 250µA
BVDSS
RDS(on)
VGS(th)
75 –– ––
–– 7.5 8.5
–– 10.0 ––
–– 12.5 ––
2.0 –– 4.0
V
mO
V
VGS = ±20V
VDS = 60V, VGS = 0V, Tj = 25oC
VDS = 60V, VGS = 0V, Tj = 125oC
VDS = 60V, VGS = 0V, Tj = 200oC
VDS = 15V, ID = 30A, Tj = 25oC
VGS = 10V
VDS = 35V
ID = 110A
VGS = 10V
VDS = 35V
ID = 110A
RG = 2.5O
IF = 110A, VGS = 0V
IF = 100A, di/dt = 100A/usec
VGS = 0V
VDS = 25V
f = 1 MHz
IGSS
IDSS
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VSD
trr
IRM(rec)
Qrr
Ciss
Coss
Crss
–– –– ±100 nA
––
––
––
––
1
50
10
µA
µA
mA
25 –– –– Mho
–– 150 220
–– 35 ––
–– 50 ––
nC
–– 25 50
––
––
210 300
70 125
nsec
–– 170 275
–– 1.1 1.5
V
85 135 nsec
–– 4.5 7.5
A
0.16 0.35 µC
–– 8000 ––
–– 1000 ––
–– 600 ––
pF
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500.
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25oC.
Available Part Numbers:
Consult Factory
PIN ASSIGNMENT (Standard)
Package
Drain Source
TO-254 (M)
Pin 1
Pin 2
TO-254Z (Z)
Pin 1
Pin 2
Gate
Pin 3
Pin 3
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0021A
DOC


Part Number SFF75N08M
Description N-Channel Power MOSFET
Maker SSDI
Total Page 2 Pages
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