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SFF70N10M Datasheet Preview

SFF70N10M Datasheet

N-Channel Power MOSFET

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SFF70N10M pdf
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SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
DESIGNER'S DATA SHEET
FEATURES:
• Rugged construction with poly silicon gate
• Ultra low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input and transfer capacitance for easy paralleling
• Hermetically sealed package
• TX, TXV and Space Level screening available
Replaces: SMM70N10 Types
SFF70N10M
SFF70N10Z
70 AMP
600 VOLT
0.030
N-CHANNEL
POWER MOSFET
TO-254 (M)
TO-254Z (Z)
MAXIMUM RATINGS
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Total Device Dissipation
CASE OUTLINE: TO-254 (Sufix M)
Pin Out:
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
SYMBOL
VDS
VGS
ID
VALUE
100
+ 20
561/
Top & Tstg
-55 to +150
@ TC = 25oC
@ TC = 55oC
R0JC
PD
.83
150
114
CASE OUTLINE: TO-254Z (Sufix Z)
Pin Out:
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
UNIT
Volts
Volts
Amps
oC
oC/W
Watts
Available with Glass or Ceramic Seals. Contact Facory for details.
NOTE: All specifications are subject to change without notification.
SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00247B



SSDI
SSDI

SFF70N10M Datasheet Preview

SFF70N10M Datasheet

N-Channel Power MOSFET

No Preview Available !

SFF70N10M pdf
www.DataSSheFetF4U7.c0omN10M
SFF70N10Z
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified)
RATING
Drain to Source Breakdown Voltage
(VGS =0 V, ID = 250µA)
SYMBOL MIN
TYP
MAX UNIT
BVDSS
100
-
-V
Drain to Source on State Resistance
(VGS = 10 V,Tc = 150oC)
RDS(on)
-
0.025 0.03
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250µA)
Forward Transconductance
(VDS > ID(on) X RDS (on) Max, IDS=60% rated ID)
Zero Gate Voltage Drain Current
(VDS = 80% rated voltage, VGS = 0V)
(VDS = 80% rated VDS, VGS = 0V, TA = 125oC)
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
ID(on)
VGS(th)
gfs
IDSS
IGSS
70
2
20
-
-
-
-
- -A
- 4.0 V
40 - Smho
-
-
250
250
µA
-
-
+100
-100
nA
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off DelayTime
Fall Time
Diode Forvard Voltage
(IS = rated ID, VGS = 0V, TJ = 25oC)
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 10 V
80% rated VDS
Rated ID
VDD =50%
rated VDS
ID=70A
RG=8
VGS=10V
Qg
Qgs
Qgd
td (on)
tr
td (off)
tf
-
-
-
-
-
-
-
110 140
30 40 nC
50 80
25 40
15
80
180
100
nsec
15 40
VSD
-
1.0 1.8 V
TJ =25oC
IF = ID
di/dt = 100A/µsec
trr
QRR
-
1.25 200 nsec
0.3 - µC
VGS =0 Volts
Ciss
-
4100
-
VDS =25 Volts
Coss
-
1200
-
pF
f =1 MHz Crss - 310 -
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
NOTES:
1/ Maximum current limited by package, die rated at 70A.


Part Number SFF70N10M
Description N-Channel Power MOSFET
Maker SSDI
Total Page 2 Pages
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