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SFF7002KA2GW Datasheet Preview

SFF7002KA2GW Datasheet

N-Channel Power MOSFET

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SFF7002KA2GW pdf
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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFF7002KA2 __ __
││
││
│ └ Screening 2/ __ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Package 3/ GW = GULLWING
SFF7002KA2GW
Dual Microminiature Package
300 mA 60 Volts 2
Dual N-Channel Logic Level
TrenchFET MOSFET
Features:
Low On-resistance, < 2 ohm
Low Input Capacitance, < 25 pF
Low threshold voltage, < 2 V
Fast switching, < 25 ns
TX, TXV, and S-Level Screening Available.
Consult Factory
Maximum Ratings
Symbol
Gate – Source Voltage
Drain to Source Voltage
Continuous Drain Current
Instantaneous (pulsed) Drain Current, Tj limited
TTA=A=10205ooCC
Power Dissipation @ TA= 25oC
Per Device
Total
Maximum Thermal Resistance, Junction to PCB
Operating & Storage Temperature
VGS
VDS
ID
IDM
PD
RΘJ-PCB 5/
TOP & TSTG
PACKAGE OUTLINE: GULLWING (GW)
6x .030
2x .050
(=.100)
.015
6x .010
Value
20
60
300
190
800
350
500
250
-65 to +200
3x .015
Units
Volts
Volts
mA
mA
mW
mW
ºC/W
ºC
.015±.010
.107
.107
.130
.125
.034
5x R.018
.193
.025
.040
±.010
.010
.035
6x R.010
.350
±.010
.033
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0024A
DOC



SSDI
SSDI

SFF7002KA2GW Datasheet Preview

SFF7002KA2GW Datasheet

N-Channel Power MOSFET

No Preview Available !

SFF7002KA2GW pdf
www.DataSheet4U.com
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 4/
SFF7002KA2GW
Symbol Min Typ Max Units
Gate – Source Breakdown Voltage
Gate to Source Threshold Voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
On-state Drain Current
Drain – Source On-Resistance
Transconductance
Body Diode Forward Voltage
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on time
Turn-off time
IG = 10 µA, VDS = 0 V
VDS = VGS , ID = 0.25 mA
VGS = +/-20 V, VDS = 0 V
VGS = +/-10 V, VDS = 0 V
VGS = +/-5 V, VDS = 0 V
VGS = +/-10 V, VDS = 0 V, TA = 85ºC
VDS = 50 V, VGS = 0 V
VDS = 60 V, VGS = 0 V
VDS = 50 V, VGS = 0 V, TA = 85ºC
VDS = 60 V, VGS = 0 V,TA = 125ºC
VDS = 7.5 V, VGS = 10 V
VDS = 4.5 V, VGS = 10 V
VDS = 25 V, VGS = 10 V
ID = 500 mA, VGS = 10 V
ID = 200 mA, VGS = 10 V
ID = 50 mA, VGS = 5 V
ID = 200 mA, VDS = 10 V
IS = 200 mA, VGS = 0 V
VDS = 10 V, VGS = 4.5 V, ID= 250 mA
VDS = 25 V, VGS = 0 V, f = 1 MHz
VDS = 25 V, VGS = 0 V, f = 1 MHz
VDS = 25 V, VGS = 0 V, f = 1 MHz
VDD = 30 V, ID = 200 mA,
RL = 150 , RG = 10 , VG= 10 V
BVDSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
GFS
VSD
Qg
Ciss
Coss
Crss
tON
tOFF
60 70
––
1.0 2.0
2.5
0.0005
10
150
100
1000
10
0.4 1
100
500
800 -
500 -
- 2.1
2.8 3.5
4.0 -
3.5 -
100
1.3
- 0.6
–– 30
-
–– 6
-
–– 2.5
-
–– 10
25
–– 13
35
Volts
Volts
uA
nA
nA
nA
nA
uA
nA
uA
mA
mA
A
mS
V
nC
pF
pF
pF
ns
ns
NOTES:
* Pulse Test: Pulse Width = 100 µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC
5/ Mounted on FR1 PCB
Available Part
Numbers:
SFF7002KA2GW
Package
Gullwing
Pin 1
Drain
PIN ASSIGNMENT
Pin 2
Pin 3
Pin 4
Gate
Source
Drain
Pin 5
Gate
Pin 6
Source
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0024A
DOC


Part Number SFF7002KA2GW
Description N-Channel Power MOSFET
Maker SSDI
Total Page 2 Pages
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