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SFF60P05Z Datasheet Preview

SFF60P05Z Datasheet

P-Channel Power MOSFET

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SFF60P05Z pdf
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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Features:
Rugged Construction with Poly Silicon Gate
Low RDS(on) and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dv/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Hermetically Sealed
TX, TXV, and Space Level Screening Available. Consult
Factory.
Replaces RFG60P05E Types
SFF60P05M
SFF60P05Z
-60 AMP/-50 Volts
33 m
P-Channel
POWER MOSFET
TO-254 (M)
TO-254Z (Z)
Maximum Ratings
Drain - Source Voltage
Gate – Source Voltage
Continuous Drain Current
Operating & Storage Temperature
Thermal Resistance, Junction to Case
Total Device Power Dissipation
PACKAGE OUTLINE: TO-254 (M)
TC = 25ºC
TC = -55ºC
Symbol
VDS
VGS
ID
TOP & TSTG
ΡθJC
PD
Value
-50
+20
-60
-55 to +150
0.8
156
118
PACKAGE OUTLINE: TO-254Z (Z)
Units
V
V
A
ºC
ºC/W
Watts
PIN 3
PIN 2
PIN 1
PIN 3
PIN 2
PIN 1
Available with Glass or Ceramic Seals. Contact Factory for Details.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FP0045D
DOC



SSDI
SSDI

SFF60P05Z Datasheet Preview

SFF60P05Z Datasheet

P-Channel Power MOSFET

No Preview Available !

SFF60P05Z pdf
www.DataSheet4U.com
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 4/
Drain to Source Breakdown Voltage
(VGS = 0V, ID = 250µA)
Drain to Source On State Resistance
(VGS = -10V, ID = 60A)
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = -10V)
Gate Threshold Voltage
(VDS = VGS, ID = -250µA)
Forward Transconductance
(VDS > ID(on) x RDS(on) Max, IDs = 60% of Rated ID)
Zero Gate Voltage Drain Current
(VDS = Max Rated Voltage, VGS = 0V)
(VDS = 80% Rated VDS, VGS = 0V)
Gate to Source Leakage (For
Gate to Source Leakage
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SFF60P05M
SFF60P05Z
Symbol Min
BVDSS
-50
RDS(on)
––
RDS(on)
––
VGS(th)
-2.0
gfs ––
TA = 25oC
TA = 125oC
At Rated VGS
VGS = -10V
VDD = 40V
ID = 60A
RL = 0.67
VDD = 50% Rated VDS
50% Rated ID
IG1 = IG2 = 2A
RL = 0.83
VGS(clamp) = -10V/+0.6V
IS = Rated ID
VGS = 0V
TJ = 25ºC
IF = 10A
di/dt = 100A/usec
VGS = 0V
VDS = -25V
f = 1 MHz
IDSS
IGSS
Qg
Qgs
Qgd
t(on)
td(on)
tr
t(off)
td(off)
tf
VSD
trr
Qrr
Ciss
Coss
Crss
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
Typ Max Units
–– –– Volts
–– 0.033
–– –– Amps
–– -4.0 Volts
–– ––
S
––
––
1
50
µA
––
––
-100
100
µA
–– 450
–– 225 nC
–– 15
–– 125
20 ––
70 ––
ns
–– 125
65 ––
20 ––
–– -1.9 Volts
140
––
6000
1800
500
200
––
––
––
––
ns
µC
pF
Available Part Numbers:
SFF60P05M, SFF60P05MUB, SFF60P05MDB;
SFF60P05Z, SFF60P05ZUB, SFF60P05ZDB
PIN ASSIGNMENT (Standard)
Package
Drain Source
TO-254 (M)
Pin 1
Pin 2
TO-254Z (Z)
Pin 1
Pin 2
Gate
Pin 3
Pin 3


Part Number SFF60P05Z
Description P-Channel Power MOSFET
Maker SSDI
Total Page 2 Pages
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