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SFF40N30Z Datasheet Preview

SFF40N30Z Datasheet

N-Channel Power MOSFET

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SFF40N30Z pdf
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFF40N30 __ __ __
¦ ¦ + Screening 2/ __ = Not Screen
¦ ¦ TX = TX Level
¦ ¦ TXV = TXV Level
¦¦
¦¦
S = S Level
¦ + Lead Option 3/ __ = Straight Leads
¦ DB = Down Bend
¦ UB = Up Bend
¦
+ Package 3/ M = TO-254
Z = TO-254Z
SFF40N30M
SFF40N30Z
40 AMP / 300 Volts
0.10
N-Channel Power MOSFET
Features:
Rugged Construction with Polysilicon Gate Cell
Low RDS(ON) and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Ceramic Seals for Improved Hermeticity
Hermetically Sealed Package
TX, TXV, Space Level Screening Available
Replacement for IXTH40N30 Types
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage
Continuous Collector Current
Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
TO-254 (M)
Symbol
TC = 25ºC
TC = 55ºC
VDS
VGS
ID
PD
Top & Tstg
RθJC
TO-254Z (Z)
Value
300
±20
40
150
114
-55 to +150
0.83
Units
Volts
Volts
Amps
W
ºC
ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00141E
DOC



SSDI
SSDI

SFF40N30Z Datasheet Preview

SFF40N30Z Datasheet

N-Channel Power MOSFET

No Preview Available !

SFF40N30Z pdf
www.DataSheet4U.com
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics @ TJ = 25ºC
(Unless Otherwise Specified)
Drain to Source Breakdown Voltage
(VGS=0 V, ID=250 µA)
Drain to Source On State Resistance
(VGS=10 V, ID=50% Rated ID)
On State Drain Current
(VDS>ID(on) X RDS(on) Max, VGS=10V)
Gate Threshold Voltage
(VDS=VGS, ID= 4mA)
Forward Transconductance
(VDS>ID(on) X RDS(on) Max, IDS= 50% Rated ID)
Zero Gate Voltage Drain Current
(VDS=max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=125ºC)
Symbol
BVDSS
RDS(on)
ID(on)
VGS(th)
gfs
IDSS
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
IGSS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
Diode Forward Voltage
(IS= Rated ID, VGS=0 V, TJ=25ºC)
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Input Capacitance
Reverse Transfer Capacitance
VGS=10 Volts
50% rated VDS
50% Rated ID
VDD=50% Rated VDS
50% Rated ID
RG= 2.0
VGS=10 Volts
TJ=25ºC
IF=10A
Di/dt=100A/µsec
VGS=0 Volts
VDS=25 Volts
f=1 MHz
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VSD
trr
QRR
Ciss
Coss
Crss
SFF40N30M
SFF40N30Z
Min
300
––
40
2.0
15
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
Typ
––
––
––
––
25
––
––
––
––
177
28
78
30
60
175
45
––
––
––
4800
745
283
Max Units
–– Volts
0.10
–– A
4.0 V
–– mho
250
1000
µA
+100
-100
200
50
105
50
90
250
90
1.5
nA
nC
nsec
V
325 nsec
–– nC
––
–– pF
––
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
Available Part Numbers:
SFF40N30M; SFF40N30MDB; SFF40N30MUB;
SFF40N30Z; SFF40N30ZDB; SFF40N0ZUB;
PIN ASSIGNMENT (Standard)
Package
TO-254 (M)
TO-254Z (Z)
Drain
Pin 1
Pin 1
Source
Pin 2
Pin 2
Gate
Pin 3
Pin 3


Part Number SFF40N30Z
Description N-Channel Power MOSFET
Maker SSDI
Total Page 3 Pages
PDF Download
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