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SFF1310Z Datasheet Preview

SFF1310Z Datasheet

N-Channel Power MOSFET

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SFF1310Z pdf
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PRELIMINARY
SOLID STATE DEVICES, INC.
14830 Valley View Av. * La Mirada, Ca 90670
Phone: (562) 404-7855 * Fax: (562) 404-1773
DESIGNER'S DATA SHEET
FEATURES:
• Rugged construction with polysilicon gate
• Low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input and transfer capacitance for easy paralleling
• Hermetically sealed package
• TX, TXV, and Space Level screening available
• Replaces: SMM40N20 Type
MAXIMUM RATINGS
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Total Device Dissipation
@ TC = 25oC
@ TC = 55oC
PACKAGE OUTLINE: TO-3
PIN OUT:
DRAIN: PIN 1
SOURCE: PIN 2
GATE:
PIN 3
SFF1310M
SFF1310Z
40 AMPS
200 VOLTS
0.050 S
N-CHANNEL
POWER MOSFET
TO-3
SYMBOL
VDS
VGS
ID
Top & Tstg
R2JC
PD
VALUE
200
±20
40
-55 to +150
0.5
250
190
UNIT
Volts
Volts
Amps
oC
oC/W
Watts
NOTE: All specifications are subject to change without notification.
SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0004A



SSDI
SSDI

SFF1310Z Datasheet Preview

SFF1310Z Datasheet

N-Channel Power MOSFET

No Preview Available !

SFF1310Z pdf
SFF1310Mwww.DataSheet4U.com
PRELIMINARY
SFF1310Z
SOLID STATE DEVICES, INC.
14830 Valley View Av. * La Mirada, Ca 90670
Phone: (562) 404-7855 * Fax: (562) 404-1773
ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified)
RATING
SYMBOL MIN TYP MAX UNIT
Drain to Source Breakdown Voltage
(VGS =0 V, ID =250:A)
BVDSS
200
-
-V
Drain to Source ON State Resistance
(VGS = 10 V, 60% of Rated ID)
ID = 37.5A RDS(on)
-
-
-
-
0.050
S
ON State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10 V)
ID(on)
50
-
-A
Gate Threshold Voltage
(VDS =VGS, ID = 4mA)
VGS(th)
2.0
-
4.0 V
Forward Transconductance
(VDS > ID(on) x RDS (on) Max, IDS = 50% rated ID)
Zero Gate Voltage Drain Current
(VGS = 0V)
VDS = max rated Voltage, TA = 25oC
VDS = 80% rated VDS, TA = 125oC
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off DELAY Time
Fall Time
VGS = 10 V
50% rated VDS
50% rated ID
VDD =50%
rated VDS
50% rated ID
RG = 6.2 S
Diode Forvard Voltage
(IS = rated ID, VGS = 0V, TJ = 25oC)
Diode Reverse Recovery Time
Reverse Recovery Charge
TJ =25oC
IF = 10A
di/dt = 100A/:sec
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS =0 Volts
VDS =25 Volts
f =1 MHz
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td (on)
tr
td (off)
tf
VSD
trr
QRR
Ciss
Coss
Crss
20 25
- S(É)
-
-
-
-
250
1000
:A
-
-
-
-
+100
-100
nA
- 190 220
- 35 50 nC
- 95 120
- 28 35
-
-
38
110
40
130
nsec
- 30 35
- - 1.50 V
- - 225 nsec
- 1.5 - :C
- 4400 -
- 800 - pF
- 285 -
NOTES:


Part Number SFF1310Z
Description N-Channel Power MOSFET
Maker SSDI
Total Page 2 Pages
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