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SFF11N80 Datasheet Preview

SFF11N80 Datasheet

N-Channel Power MOSFET

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SFF11N80 pdf
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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFF11N80 __ __ __
│ │ └ Screening 2/ __ = Not Screen
││
││
││
││
TX = TX Level
TXV = TXV Level
S = S Level
│ └ Lead Option 3/ __ = Straight Leads
DB = Down Bend
UB = Up Bend
Package 3/ M = TO-254
Z = TO-254Z
SFF11N80 Series
11 AMP / 800 Volts
0.95
N-Channel MOSFET
Features:
Rugged Construction with Polysilicon Gate Cell
Low RDS(ON) and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Hermetically Sealed, Isolated Package
Ceramic Seal Package Available. Contact Factory
TX, TXV, S-Level screening available
Replacement for IXTH11N80 Types
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage
Continues Collector Current
Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
TO-254 (M)
TC = 25ºC
TC = 55ºC
Symbol
VDS
VGS
ID
PD
Top & Tstg
RθJC
TO-254Z (Z)
Value
800
±20
11
150
114
-55 to +175
0.83
Units
Volts
Volts
Amps
W
ºC
ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00213C
DOC



SSDI
SSDI

SFF11N80 Datasheet Preview

SFF11N80 Datasheet

N-Channel Power MOSFET

No Preview Available !

SFF11N80 pdf
www.DataSheet4U.com
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 4/
Drain to Source Breakdown Voltage
(VGS = 0V, ID = 250µA)
Drain to Source On State Resistance
(VGS = 10V, ID = 5.5A)
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Gate Threshold Voltage
(VDS = VGS, ID = 250µA)
Gate to Source Leakage
(VGS = ±20V)
Zero Gate Voltage Drain Current
(VGS = 0V)
Forward Transconductance *
(VDS > ID(on) x RDS(on) Max, ID = 5.5A)
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
Diode Forward Voltage *
(IF = 11A, VGS = 0V)
Diode Reverse Recovery Time
(IF = 11A, di/dt = 100A/µsec)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 800V, TA = 25ºC
VDS = 640V, TA = 125ºC
VGS = 10V
VDS = 640V
ID = 5.5A
VDS = 400V
ID = 5.5A
RG = 2.0
VGS = 0V
VDS = 25V
f = 1MHz
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
Symbol
BVDSS
RDS(on)
ID(on)
VGS(th)
IGSS
IDSS
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VSD
trr
Ciss
Coss
Crss
SFF11N80 Series
Min Typ Max
800 ––
––
–– –– 0.95
11 –– ––
2.0 –– 4.5
–– –– ±100
–– –– 250
–– –– 1.0
8.0 14 ––
–– 128 145
–– 30 55
–– 55 80
–– 20 50
–– 33 50
–– 63 100
–– 32 50
–– –– 1.5
–– –– 550
–– 4200 ––
–– 360 ––
–– 100 ––
Units
Volts
A
V
nA
µA
mA
Mho
nC
nsec
V
nsec
pF
Available Part Numbers:
SFF11N80M; SFF11N80MDB; SFF11N80MUB;
SFF11N80Z; SFF11N80ZDB; SFF11N80ZUB;
PIN ASSIGNMENT (Standard)
Package
TO-254 (M)
TO-254Z (Z)
Drain
Pin 1
Pin 1
Source
Pin 2
Pin 2
Gate
Pin 3
Pin 3


Part Number SFF11N80
Description N-Channel Power MOSFET
Maker SSDI
Total Page 3 Pages
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