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ST9018 Datasheet Preview

ST9018 Datasheet

NPN Silicon Epitaxial Planar Transistor

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ST9018 pdf
ST 9018
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NPN Silicon Epitaxial Planar Transistor
for AM/FM amplifier and local oscillator of
FM/VHF tuner applications.
The transistor is subdivided into six groups, D,
E, F, G, H and I, according to its DC current
gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 5 V, IC = 1 mA
Current Gain Group
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 100 µA
Collector Cutoff Current
at VCB = 12 V
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
Collector Base Capacitance
at VCB = 10 V, f = 1 MHz
Gain Bandwidth Product
at VCE = 5 V, IC = 5 mA
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
TS
TO-92 Plastic Package
Value
30
15
5
50
400
150
-55 to +150
Unit
V
V
V
mA
mW
OC
OC
Symbol
D hFE
E hFE
F hFE
G hFE
H hFE
I hFE
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
VCE(sat)
CCBO
fT
Min.
28
39
54
72
97
132
30
15
5
-
-
-
700
Typ.
-
-
-
-
-
-
-
-
-
-
-
1.3
1100
Max.
45
60
80
108
146
198
-
-
-
50
0.5
1.7
-
Unit
-
-
-
-
-
-
V
V
V
nA
V
pF
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/12/2005



SEMTECH
SEMTECH

ST9018 Datasheet Preview

ST9018 Datasheet

NPN Silicon Epitaxial Planar Transistor

No Preview Available !

ST9018 pdf
ST 9018
www.DataSheet4U.com
STATIC CHARACTERISTIC
10
9
8
7
6
5
4
3
2
1
0
0
IB=90 A
IB=80 A
IB=70 A
IB=60 A
IB=50 A
IB=40 A
IB=30 A
IB=20 A
IB=10 A
1 2 3 4 5 6 7 8 9 10
VCE(V),COLLECTOR-EMITTER VOLTAGE
CURRENT GAIN-BANDWIDTH PRODUCT
2000
1000
VCE=5V
500
300
100
0.1
0.3 0.5 1
3 5 10
IC(mA),COLLECTOR CURRENT
30
OUTPUT CAPACITANCE
2.4
f=1MHz
I E =0
2.0
1.6
1.2
0.8
0.4
0
1
3 5 10
30 50
VCB(V),COLLECTOR-BASE VOLTAGE
100
1000
500
300
100
50
30
DC CURRENT GAIN
VCE=5V
10
0.5 1
3 5 10
IC(mA),COLLECTOR CURRENT
30
BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
10
I C=10I B
5
3
1
VBE(sat)
0.5
0.3
VCE(sat)
0.1
0.05
0.03
0.01
0.1 0.3 0.5 1
3 5 10
IC(mA),COLLECTOR CURRENT
30
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/12/2005


Part Number ST9018
Description NPN Silicon Epitaxial Planar Transistor
Maker SEMTECH
Total Page 2 Pages
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