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Rohm Semiconductor Electronic Components Datasheet

RLD-78NP-G1 Datasheet

Title AlGaAs/ double-heterojunction/ visible laser diodes

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RLD-78NP-G1 pdf
Laser Diodes
RLD-78PP-G1 / RLD-78NP-G1
Title AlGaAs, double-heterojunction,
visible laser diodes
RLD-78PP-G1 / RLD-78NP-G1
RLD-78PP-G1 and RLD-78NP-G1 are the semiconductor laser developed for the laser beam printer application.
We have achieved the very small variations of the optical characteristics and low droop by ROHM original Epitaxial
growth technology using Molecular Beam Epitaxy.
In addition, they have the appropriate characteristics for sensor application as well.
!Applications
Laser beam printers
Sensors
!Features
1) Minimum variation of radiation
beam angle.
2) Low droop.
3) High stability wave length.
4) Can be driven by single power
supply.
!External dimensions (Units : mm)
0.4±0.1
90˚±2˚
P (3)
T
y
L.D.
P.D.
p
e (1) (2)
φ5.6
+0
0.025
Glass window
Chip
3φ0.45
N
T
y
p
e
(3)
L.D.
(1)
P.D.
(2)
(3) (2)
(1)
!Absolute maximum ratings (Tc=25°C)
Parameter
Output
Laser
PIN photodiode
Operating temperature
Storage temperature
Symbol
Po
VR
VR(PIN)
Topr
Tstg
Limits
5
2
30
-10~+60
-40~+85
Unit
mW
V
V
˚C
˚C


Rohm Semiconductor Electronic Components Datasheet

RLD-78NP-G1 Datasheet

Title AlGaAs/ double-heterojunction/ visible laser diodes

No Preview Available !

RLD-78NP-G1 pdf
Laser Diodes
RLD-78PP-G1 / RLD-78NP-G1
!Electrical and optical characteristics (Ta=25°C)
Parameter
Threshold current
Operating current
Operating voltage
Differential efficiency
Symbol
Ith
Iop
Vop
η
Min. Typ. Max. Unit
Conditions
10 25 45
mA
-
15 45 65
mA Po=3mW
- 1.9 2.3
V Po=3mW
0.1
0.2
0.3
mW/mA
2mW
I(3mW)I(1mW)
Monitor current
Im 0.3 0.55 0.9 mA Po=3mW
Parallel divergence
angle
θ //* 8 11 15 deg
Perpendicular
divergence angle
Parallel deviation angle
θ *
∆φ //
25 30 38
- - ±2
deg
Po=3mW
deg
Perpendicular deviation
angle
Emission point
accuracy
Peak emission
wavelength
∆φ
X
Y
Z
λ
- - ±3
- - ±80
770 785 795
deg
µm -
nm Po=3mW
Droop
P
- 5 10
% Po=3mW
*θ // and θ are defined as the angle within which the intensity is 50% of the peak value.
!Electrical and optical curves
5
25˚C
4 40˚C
50˚C
60˚C
3
2
1
100
90
80
70
60
50
40
30
20
0
10 20 30 40 50 60 70 80
OPERATING CURRENT : IF (mA)
Fig. 1 Optical output vs. operating current
10
-20 -10 0 10 20 30 40 50 60 70
PACKAGE TEMPERATURE : TC (˚C)
Fig. 2 Dependence of threshold current
on temperature
1.0
θ direction
θ direction
0.5
0
-40 0 40
ANGLE (deg)
Fig. 3 Far field pattern


Part Number RLD-78NP-G1
Description Title AlGaAs/ double-heterojunction/ visible laser diodes
Maker Rohm
Total Page 3 Pages
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