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Rohm Semiconductor Electronic Components Datasheet

K1717 Datasheet

2SK1717

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K1717 pdf
Transistors
Small switching (60V, 2A)
2SK1717
!Features
1) Low on resistance.
2) High-speed switching.
3) Optimum for a pocket resource etc. because of
undervoltage actuation (2.5V actuation).
4) Driving circuit is easy.
5) Easy to use parallel.
6) It is strong to an electrostatic discharge.
!Structure
Silicon N-channel
MOS FET transistor
!External dimensions (Units : mm)
4.5+−00..21
1.6±0.1
1.5±0.1
ROHM : MPT3
E I A J : SC-62
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
Abbreviated symbol : KE
0.4−+00..015
(1) Gate
(2) Drain
(3) Source
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous
Pulsed
ID
IDP1
Reverse drain
current
Continuous
Pulsed
IDR
IDRP1
Total power dissipation(Tc=25°C)
PD
Channel temperature
Tch
Storage temperature
Tstg
1 Pw 10µs, Duty cycle 1%
2 When mounted on a 40 × 40 × 0.7 mm alumina board.
Limits
60
±20
2
8
2
8
0.5
22
150
55∼+150
Unit
V
V
A
A
A
A
W
°C
°C
!Internal equivalent circuit
Drain
Gate
Gate
Protection
Diode
Source
A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when rated voltages are
exceeded.
!Electrical characteristics (Ta = 25°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Pw 300µs, Duty cycle 1%
Symbol
IGSS
V(BR)DSS
IDSS
VGS(th)
RDS(on)
RDS(on)
Yfs∗
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Min.
60
0.8
1.5
Typ.
0.25
0.35
160
85
25
20
50
120
70
Max.
±10
10
1.5
0.32
0.45
Unit Test Conditions
µA VGS = ±20V, VDS = 0V
V ID = 1mA, VGS = 0V
µA VDS = 60V, VGS = 0V
V VDS = 10V, ID = 1mA
ID = 1A, VGS = 4V
ID = 1A, VGS = 2.5V
S ID = 1A, VDS = 10V
pF VDS = 10V
pF VGS = 0V
pF f = 1MHz
ns ID = 1A, VDD 30V
ns VGS = 4V
ns RL = 30
ns RG = 10



Rohm Semiconductor Electronic Components Datasheet

K1717 Datasheet

2SK1717

No Preview Available !

K1717 pdf
Transistors
2SK1717
!Electrical characteristic curves
3
When mounted on a 40 x 40 x 0.7 mm
aluminum-ceramic board.
2
1
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE : Ta(°C)
Fig.1 Total Power Dissipation vs.
Case Temperature
10
Operating in this
area is limited by
RDS(on)
1
100µs
1ms
Pw=10ms
0.1 DC OPERATION
0.01
Ta=25°C
Single Pulsed
0.001
0.1
1
10 100
DRAIN-SOURCE VOLTAGE : VDS(V)
Fig.2 Maximum Safe Operating Area
2
4V
3.5V
3V
2.5V
1
Ta=25°C
Pulsed
2V
VGS=1.5V
0
0 5 10
DRAIN-SOURCE VOLTAGE : VDS(V)
Fig.3 Typical Output Characteristics
10
VDS=10V
Pulsed
Ta=25°C
1 25°C
75°C
125°C
0.1
01 2 34 5
GATE THRESHOLD VOLTAGE : VGS(th)(V)
Fig.4 Typical Transfer Characteristics
4
VDS=10V
3
2
10mA
1
ID=1mA
0
50 25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch(°C)
Fig.5 Gate Threshold Voltage vs.
Channel Temperature
10
VGS=4V
Pulsed
Ta=125°C
1 75°C
25°C
25°C
0.1
0.01
0.1 1
DRAIN CURRENT : ID(A)
10
Fig.6 Static Drain-Source On-
State Resistance vs.
Drain Current(Ι)



Rohm Semiconductor Electronic Components Datasheet

K1717 Datasheet

2SK1717

No Preview Available !

K1717 pdf
Transistors
10
1
VGS=2.5V
Pulsed
Ta=125°C
75°C
25°C
25°C
0.1
0.01
0.1 1
DRAIN CURRENT : ID(A)
10
Fig.7 Static Drain-Source On-
State Resistance vs.
Drain Current(ΙΙ)
1
Ta=25°C
Pulsed
0.75
2A
0.5
ID=1A
0.25
0
0 5 10 15 20
GATE-SOURCE VOLTAGE : VGS(V)
Fig.8 Static Drain-Source On-
State Resistance vs.
Gate-Source Voltage
2SK1717
1
VGS=4V
Pulsed
0.5
2A
ID=1A
0
50 25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch(°C)
Fig.9 Static Drain-Source On-
State Resistance vs.
Channel Temperature
10
Ta=25°C
25°C
1
VDS=10V
Pulsed
125°C
75°C
10
1
0.1
VGS=4V
Pulsed
Ta=125°C
75°C
25°C
25°C
10
Ta=25°C
Pulsed
4V
1
VGS=0V
0.1
0.1
0.01
0.1 1
DRAIN CURRENT : ID(A)
10
Fig.10 Forward Trasfer Admitance vs.
Drain Current
0.01
0
0.4 0.8 1.2 1.6
SOURCE-DRAIN VOLTAGE : VSD(V)
Fig.11 Reverse Drain Current vs.
Source-Drain Voltage(Ι)
0.01
0
0.4 0.8 1.2 1.6
SOURCE-DRAIN VOLTAGE : VSD(V)
Fig.12 Reverse Drain Current vs.
Source-Drain Voltage(ΙΙ)
1000
100
10
VGS=0V
f=1MHZ
Ta=25°C
Ciss
Coss
Crss
1
0 10 100
DRAIN-SOURCE VOLTAGE : VSD(V)
1000
100
10
0.1
td(off)
tf
tr
td(on)
VDD 30V
VGS=4V
RG=10
Ta=25°C
Pulsed
1
DRAIN CURRENT : ID(A)
10
Fig.13 Typical Capacitance vs.
Drain-Source Voltage
Fig.14 Switching Characteristics
(a measurement circuit diagram Fig.17 , it refers 18 times)
1000
di/dt=50A/µs
VGS=0V
Ta=25°C
Pulsed
100
10
0.1 1
10
REVERSE DRAIN CURRENT : IDR(A)
Fig.15 Reverse Recovery Time vs.
Reverse Drain Current




Part Number K1717
Description 2SK1717
Maker Rohm
Total Page 4 Pages
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