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Rohm Semiconductor Electronic Components Datasheet

B1694 Datasheet

2SB1694

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B1694 pdf
Transistors
2SB1694
General purpose amplification (30V, 1A)
2SB1694
!Application
Low frequency amplifier
Driver
!Features
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) ≤ −380mV
At IC = 500mA / IB = 25mA
!External dimensions (Units : mm)
1.25
2.1
0.1Min.
Each lead has same dimensions
ROHM : UMT3 Abbreviated symbol : ES
EIAJ : SC-70
JEDEC : SOT-323
(1) Emitter
(2) Base
(3) Collector
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
Emitter-base voltage
VCEO
VEBO
Collector current
IC
ICP
Power dissipation
Junction temperature
PC
Tj
Range of storage temperature Tstg
Single pulse, PW=1ms
Limits
30
30
6
1
2
200
150
55~+150
Unit
V
V
V
A
A
mW
°C
°C
!Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
2SB1694
Taping
T106
3000
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
1 Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
30
30
6
270
Typ.
180
320
7
Max.
100
100
380
680
Unit
V
V
V
nA
nA
mV
MHz
pF
Conditions
IC=−10µA
IC=−1mA
IE=−10µA
VCB=−30V
VEB=−30V
IC=−500mA, IB=−25mA
VCE=−2V, IC=−100mA 1
VCE=−2V, IE=100mA, f=100MHz 1
VCB=−10V, IE=0A, f=1MHz
1/2


Rohm Semiconductor Electronic Components Datasheet

B1694 Datasheet

2SB1694

No Preview Available !

B1694 pdf
Transistors
!Electrical characteristic curves
1000
Ta=100°C
VCE=−2V
Pulsed
Ta=25°C
Ta=−40°C
100
10
0.001
0.01 0.1
1
COLLECTOR CURRENT : IC (A)
10
Fig.1 DC current gain
vs. collector current
2SB1694
10
IC/IB=20/1
Pulsed
1 VBE(sat)
Ta=−40°C
Ta=25°C
Ta=100°C
0.1
Ta=100°C
Ta=25°C
Ta=−40°C
VCE(sat)
0.01
0.001
0.01
0.1
COLLECTOR CURRENT : IC (A)
1
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
10
Ta=25°C
Pulsed
1
0.1
0.01
IC/IB=20/1
IC/IB=50/1
IC/IB=10/1
0.001
0.001
0.01 0.1
COLLECTOR CURRENT : IC (A)
1
Fig.3 Collector-emitter saturation voltage
vs. collector current
1
VCE=−2V
Pulsed
Ta=100°C
0.1
0.01
Ta=25°C
Ta=−40°C
1000
100
Ta=25°C
VCE=−2V
f=100MHz
1000
100
10
Ta=25°C
VCE=−5V
tstg IC/IB=20/1
tf
tr
tdon
0.001
0
0.5 1
1.5
BASE TO EMITTER CURRENT : VBE (V)
Fig.4 Grounded emitter propagation
characteristics
10
0.01
0.1
EMITTER CURRENT : IE (A)
1
Fig.5 Gain bandwidth product
vs. emitter current
1
0.01 0.1
COLLECTOR CURRENT : IC (A)
Fig.6 Switching time
1
100
Cob
10
Ta=25°C
Cib IC=0A
f=1MHz
1
0.1 1 10 100
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
10
1 1ms
0.1
DC
PW=1001m0sms
Operation
0.01
Ta=25°C
0.001 Single Pulse
0.1 1
10 100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Safe Operating Area
2/2


Part Number B1694
Description 2SB1694
Maker Rohm
Total Page 2 Pages
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