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Rohm Semiconductor Electronic Components Datasheet

B1644J Datasheet

PNP -4A -80V Power Transistor

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B1644J pdf
2SB1644J
PNP -4A -80V Power Transistor
Parameter
VCEO
IC
Value
80V
4A
Features
1) Suitable for Power Driver
2) Low VCE(sat)
VCE(sat)= 1.5V(Max.) (IC/IB= 3A/ 300mA)
3) Lead Free/RoHS Compliant.
Outline
LPT(S) (D2-PAK)
Collector
Base
Emitter
2SB1644J
(SC-83)
Datasheet
Inner circuit
Collector
Base
Emitter
Packaging specifications
Part No.
Package
2SB1644J
Taping
Taping
code
TL
Applications
Automotive power driver , LED driver
Power supply
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
330 24 1,000
Marking
B1644
Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
*1 Pw=100ms, single pulse
*2 Tc=25°C
Symbol
VCBO
VCEO
VEBO
IC
ICP*1
PD *2
Tj
Tstg
Values
80
80
5
4
6
30
150
55 to 150
Unit
V
V
V
A
A
W
°C
°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/6
2013.03 - Rev.A


Rohm Semiconductor Electronic Components Datasheet

B1644J Datasheet

PNP -4A -80V Power Transistor

No Preview Available !

B1644J pdf
2SB1644J
Data Sheet
Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Collector-emitter
breakdown voltage
BVCEO
Collector-base
breakdown voltage
BVCBO
Emitter-base
breakdown voltage
BVEBO
Conditions
IC = 1mA
IC = 50A
IE = 50A
Collector cut-off current
ICBO VCB = 80V
Min.
80
80
5
-
Emitter cut-off current
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
DC current gain
IEBO
VCE(sat)
VBE(sat)
hFE *3
Transition frequency
fT
Output capacitance
Cob
Turn-on time
ton *4
Storage time
tstg *4
Fall time
tf *4
*3 hFE rank
*4 See switching time test circuit
VEB = 4V
IC = 3A, IB = 300mA
IC = 3A, IB = 300mA
VCE = 5V, IC = 1A
VCE = 5V, IE = 500mA
f=5MHZ
VCB = 10V, IE = 0A,
f = 1MHz
IC= 2A
IB1= 200mA
IB2=200mA
VCC40V
-
-
-
100
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
12
100
160
1000
600
Max.
-
-
-
10
10
1.5
1.5
320
-
-
-
-
-
Unit
V
V
V


V
V
-
MHz
pF
ns
ns
ns
hFE rank categories
Rank
E
hFE 100 to 200
F
160 to 320
VIN
Pw
Pw ~_ 50μs
DUTY CYCLE <_ 1%
IB1
IB2
RL=20Ω
IC
BASE CURENT
WAVEFORM
VCC ~_ -40V
ton
90%
COLLECTOR CURRENT
WAVEFORM
10%
tstg tf
IB2
IB1
IC
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/6
2013.03 - Rev.A


Part Number B1644J
Description PNP -4A -80V Power Transistor
Maker Rohm
Total Page 7 Pages
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B1644J pdf
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