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Rohm Semiconductor Electronic Components Datasheet

B1644 Datasheet

Power Transistor

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B1644 pdf
Transistors
Power Transistor (80V, 4A)
2SB1644
2SB1644
!Features
1) Low saturation voltage.
(Typ. VCE(sat) = 0.5V at IC / IB = 3A / 0.3A)
2) Excellent DC current gain characteristics.
!External dimensions (Units : mm)
13.1
3.2
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse, Pw = 100ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
80
80
5
4
6
30
150
55~+150
Unit
V
V
V
A (DC)
*A (Pulse)
W (Tc = 25°C)
°C
°C
8.8
0.5Min.
ROHM : PSD3
EIAJ : SC-83A
(1) Base
(2) Collector
(3) Emitter
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SB1644
PSD3
EF
T100
1000
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
* Measured using pulse current.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Min.
80
60
5
100
Typ.
12
100
Max.
10
10
1.5
1.5
320
Unit
V
V
V
µA
µA
V
V
MHz
pF
Conditions
IC = 50µA
IC = 1mA
IE = 50µA
VCB = 80V
VEB = 4V
IC/IB = 3A/0.3A
IC/IB = 3A/0.3A
VCE/IC = 5V/1A
VCE = 5V , IE = 0.5A , f = 5MHz
VCB = 10V , IE = 0A , f = 1MHz
*
*
*




Part Number B1644
Description Power Transistor
Maker Rohm
Total Page 1 Pages
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