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Rohm Semiconductor Electronic Components Datasheet

B1568 Datasheet

2SB1568

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B1568 pdf
Transistors
Power Transistor (80V, 4A)
2SB1568
2SB1568
z Features
zExternal dimensions (Unit : mm)
1) Available in TO-220 FN package
2) Darling connection provides high
10.0
φ3.2
4.5
2.8
dc current gain (hFE)
3) Damper diode is incorporated
m4) Built in resistors between base and
emitter
o5) Two millimeters lower than TO-220 FP
.cwhich allows higher density mounting
6) Complementary pair with 2SD2399
ROHM : TO-220FN
1.2
1.3
0.8
2.54 2.54
(1) (2) (3)
0.75
(1) Base (Gate)
2.6 (2) Collector (Drain)
(3) Emitter (Sourse)
UzApplications
t4Power amplifler
ezAbsolute maximum rating (Ta=25°C)
eParameter
hCollector-base voltage
Collector-emitter voltage
SEmitter-base voltage
taCollector current
Collector dissipation
aJunction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
80
80
7
4
6
2
30
150
55 to +150
Unit
V
V
V
A(DC)
A(Pulse)
W(Ta=25°C)
W(Tc=25°C)
°C
°C
zEquivalent circuit
C
B
R1 R2
E
:R1= 3kB : Base
:R2=300C : Collector
E : Emitter
w.DzElectrical characteristics (unless otherwise noted, Ta=25°C)
Parameter
Symbol
wCollectorbase
breakdown voltage
BVCBO
wCollectoremitter
breakdown voltage
BVCEO
Collector cutoff current
BVEBO
omEmitter cutoff current
ICBO
.cDC current gain
Collectoremitter
Ubreakdown voltage
t4Collectoremitter
saturation voltage
eeTransition frequency
IEBO
hFE 1
1
VCE(sat)
fT1 2
hOutput capacitance
Cob
S1 Measured using pulse current.
www.Data2 Transition frequency of the device.
Min.
80
80
7
1000
Typ.
5000
1.0
12
35
Max.
100
3
3
10000
1.5
Unit
V
V
V
µA
mV
V
MHz
pF
Conditions
IC = −50µA
IC = −1mA
IE = −5mA
VCB = −80V
VEB = −5V
VCE= −3V, IC = −2A
IC/IB= −2A/ 4mA
VCE= −5V, IE = 0.5A, f=10MHz
VCB= −10V, IE = 0A, f=1MHz
Rev.A
1/3


Rohm Semiconductor Electronic Components Datasheet

B1568 Datasheet

2SB1568

No Preview Available !

B1568 pdf
Transistors
zPackaging specifications
Packaging
Type
Code
hFE Basic ordering unit(pieces)
2SB1568 1000 to 10000
Bulk
500
2SB1568
zElectrical characteristics
10
VCE= 3V
1
0.1
0.01
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
-5
Tc=25°C
1mA
-4
0.9mA
0.8mA
0.7mA
-3
0.6mA
0.5mA
-2 0.4mA
0.3mA
-1
0.2mA
IB=0A
0
0 -1 -2 -3 -4 -5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( Ι )
5
Pc=30W
1mA
4 0.9mA
0.8mA
3
2
Tc=25°C
−−00..67mmAA
0.5mA
0.4mA
0.3mA
1 0.2mA
IB=0A
0
0 4 8 12 16 20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
10 Ic Max. (Pulse)
5
2
1
0.5
Pw=10ms
100ms
DC
0.2
0.1
0.05
Tc=25°C
0.02 Single
nonrepetitive
0.01 pulse
0.1 0.2 0.5 1 2
5 10 20 50 100
COLLECTOR TO EMITTER VOLTAGE : TCE (V)
Fig.4 Safe operating area
10000
1000
100 Unmounted
10
Infinite heat sink
1
0.1
0.001 0.01
0.1
1
10 100 1000
TIME : t (s)
Fig.5 Transient thermal resistance
10000 Ta=25°C
5000
2000
1000
500
VCE=5V
3V
200
100
50
20
10
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10
CULLECTOR CURRENT : Ic (A)
Fig.6 DC current gain vs.
collector current ( Ι )
Rev.A
2/3


Part Number B1568
Description 2SB1568
Maker Rohm
Total Page 4 Pages
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