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Rohm Semiconductor Electronic Components Datasheet

B1241 Datasheet

2SB1241

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B1241 pdf
Transistors
2SB1260 / 2SB1181 / 2SB1241
Power Transistor (80V, 1A)
2SB1260 / 2SB1181 / 2SB1241
!Features
1) High breakdown voltage and high
current.
BVCEO= 80V, IC=1A
2) Good hFE linearity.
3) Low VCE(sat).
4) Complements the 2SD1898 /
2SD1863 / 2SD1733.
!Structure
Epitaxial planar type
PNP silicon transistor
!External dimensions (Units : mm)
2SB1260
4.5+00..12
1.6±0.1
1.5+00..12
2SB1181
6.5±0.2
5.1+00..12
C0.5
2.3+00..12
0.5±0.1
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
ROHM : MPT3
EIAJ : SC-62
Abbreviated
symbol: BH
0.4+00..015
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1
1.0±0.2
(1) Base
(2) Collector
(3) Emitter
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
2SB1241
6.8±0.2
2.5±0.2
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
* Denotes hFE
!Absolute maximum ratings (Ta=25°C)
(1) Emitter
(2) Collector
(3) Base
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SB1260
Collector power
dissipation
2SB1241, 2SB1181
2SB1181
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
-80
-80
-5
-1
-2
0.5
2
1
10
150
-55~+150
Unit
V
V
V
A(DC)
A(Pulse) *1
*2
W
*3
W(Tc=25˚C)
˚C
˚C
*1 Single pulse, Pw=100ms
*2 When mounted on a 40×40×0.7 mm ceramic board.
*3 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.


Rohm Semiconductor Electronic Components Datasheet

B1241 Datasheet

2SB1241

No Preview Available !

B1241 pdf
Transistors
2SB1260 / 2SB1181 / 2SB1241
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO -80
-
-
V IC=-50µA
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BVCEO -80
-
-
V IC=-1mA
BVEBO -5 - - V IE=-50µA
ICBO
-
- -1 µA VCB=-60V
IEBO
-
- -1 µA VEB=-4V
Collector-emitter saturation voltage
VCE(sat)
-
- -0.4 V IC/IB=-500mA/-50mA
2SB1260, 2SB1181
82 - 390 -
DC current transfer ratio
hFE
VCE=-3V, IC=-0.1A
2SB1241
120 - 390 -
2SB1260, 2SB1241
Transition frequency
2SB1181
Output capacitance
fT
Cob
- 100 - MHz VCE=-5V, IE=50mA, f=30MHz
- 100 - MHz VCE=-10V, IE=50mA, f=30MHz
- 25 - pF VCB=-10V, IE=0A, f=1MHz
!Packaging specifications and hFE
Type
2SB1260
2SB1241
2SB1181
Package
Code
Basic ordering
hFE unit (pieces)
PQR
QR
PQR
TL
2500
-
-
Taping
TV2
2500
-
-
T100
1000
-
-
hFE values are classified as follows :
Item P Q R
hFE 82~180 120~270 180~390
!Electrical characteristic curves
-1000
Ta=25˚C
VCE=-5V
-100
-10
-1
-0.1
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
Ta=25˚C
-1.0
-0.45mA
-0.8 -0.4mA
-0.35mA
-0.6 -0.3mA
-0.25mA
-0.4 -0.2mA
-0.15mA
-0.2
0
0
-0.1mA
-0.05mA
IB=0mA
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics
1000
500
Ta=25˚C
200
VCE=-3V
100
50 -1V
20
10
-1 -2 -5 -10 -20 -50-100 -200-500-1000-2000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs.
collector current


Part Number B1241
Description 2SB1241
Maker Rohm
Total Page 3 Pages
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