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Renesas Electronics Components Datasheet

K1169 Datasheet

2SK1169

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K1169 pdf
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2SK1169, 2SK1170
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1
2
3
REJ03G0916-0200
(Previous: ADE-208-1254)
Rev.2.00
Sep 07, 2005
D
G
1. Gate
2. Drain
(Flange)
3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6



Renesas Electronics Components Datasheet

K1169 Datasheet

2SK1169

No Preview Available !

K1169 pdf
2SK1169, 2SK1170
www.DaAtabShseoet4luU.tceomMaximum Ratings
Item
Drain to source voltage
2SK1169
2SK1170
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Item
Symbol
Drain to source
breakdown voltage
2SK1169
2SK1170
V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
IGSS
Zero gate voltage drain 2SK1169
current
2SK1170
IDSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on 2SK1169
state resistance
2SK1170
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Body to drain diode forward voltage VDF
Body to drain diode reverse recovery
time
trr
Note: 3. Pulse test
Min
450
500
±30
2.0
10
Typ
0.20
0.22
16
2800
780
90
32
115
200
90
1.0
500
Ratings
450
500
±30
20
80
20
120
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
±10
250
3.0
0.25
0.27
Unit
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±25 V, VDS = 0
µA VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
V ID = 1 mA, VDS = 10 V
ID = 10 A, VGS = 10 V *3
S ID = 10 A, VDS = 10 V *3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 10 A, VGS = 10 V,
ns RL = 3
ns
ns
V IF = 20 A, VGS = 0
ns IF = 20 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6



Renesas Electronics Components Datasheet

K1169 Datasheet

2SK1169

No Preview Available !

K1169 pdf
2SK1169, 2SK1170
www.DaMtaSahienet4CUh.coamracteristics
Power vs. Temperature Derating
150
100
50
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
50
10 V 7 V
6V
40
Pulse Test
30
20 5 V
10
VGS = 4 V
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
6
20 A
4
10 A
2
ID = 5 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
100
30
10
3
1.0
10
OispliemraitetiodnbiDynCRtOhPDpiWSser(aa=otirn1oe)0nam(TsC1(=m11S02s0h5o°µCts))
µs
0.3 Ta = 25°C
2SK1170
2SK1169
0.1
1 3 10 30 100 300
1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
VDS = 20 V
Pulse Test
16
12
8
4 75°C
–25°C
TC = 25°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1.0
0.5
VGS = 10 V
0.2 15 V
0.1
0.05
1
2 5 10 20 50 100
Drain Current ID (A)




Part Number K1169
Description 2SK1169
Maker Renesas Technology
Total Page 7 Pages
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